اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدGiant longitudinal negative magneto-resistance under perpendicular magnetic field in Bi$_{2-x}$Fe$_x$Se$_{3-x}$S$_x$ Topological insulators
57
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The magnetic, magneto-transport and ARPES studies of Fe and S co-doped Bi2Se3 were investigated. With doping concentration magneto-resistance (MR) gradually decreases and for a certain doping concentration giant negative MR is observed which persists up to room temperature. Magnetic measurement indicates that the negative MR is observed when ferromagnetic ordering is induced with Fe doping. The magnetic ordering can be attributed with the RKKY interaction. Positive MR reappears with larger doping concentration which may be attributed to the decrease of FM ordering due to the turning off of the spin-orbit coupling leading to the destruction of non-trivial bulk state. This in-effect de-hybridizes the conduction band with the Fe spin. The ARPES data also indicates that above a critical doping concentration (x>0.09) the non-trivial bulk state is completely destroyed.
قيم البحث
اقرأ أيضاً
We present a detailed investigation of the magnetic and structural properties of magnetically doped 3D topological insulator Bi2Se3. From muon spin relaxation measurements in zero magnetic field, we find that even 5% Fe doping on the Bi site turns th
e full volume of the sample magnetic at temperatures as high as ~250 K. This is also confirmed by magnetization measurements. Two magnetic phases are identified; the first is observed between ~10-250 K while the second appears below ~10 K. These cannot be attributed to impurity phases in the samples. We discuss the nature and details of the observed magnetism and its dependence on doping level.
A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi$_{2-x}$Sb$_x
$Te$_{3-y}$Se$_y$ thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of BSTS on its top half by employing tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.
The origin of the gap in NiS2 as well as the pressure- and doping-induced metal-insulator transition in the NiS2-xSex solid solutions are investigated both theoretically using the first-principles band structures combined with the dynamical mean-fiel
d approximation for the electronic correlations and experimentally by means of infrared and x-ray absorption spectroscopies. The bonding-antibonding splitting in the S-S (Se-Se) dimer is identified as the main parameter controlling the size of the charge gap. The implications for the metal-insulator transition driven by pressure and Se doping are discussed.
We used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi$_2$Se$_3$ and Bi$_{0.5}$Sb$_{1.5}$Te$_{3-x}$Se$_{x}$. Our goal was to identify the spin plasmon p
redicted by Raghu and co-workers [S. Raghu, et al., Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carrers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface, $chi (textbf{q},omega)$, at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggests that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.
We have investigated the optical properties of thin films of topological insulators Bi$_{2}$Te$_{3}$, Bi$_{2}$Se$_{3}$ and their alloys Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ on BaF$_{2}$ substrates by a combination of infrared ellipsometry and reflectivity in
the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in Bi$_2$Se$_3$, after the correction for the Burstein-Moss effect, we find the value of direct bandgap of $215pm10$ meV at 10 K. Our data supports the picture that Bi$_2$Se$_3$ has a direct band gap located at the $Gamma$ point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward oriented paraboloid, i.e. without a camel-back structure. In Bi$_2$Te$_3$, the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent GW band structure calculations suggesting that the direct interband transition does not occur at the $Gamma$ point but near the Z-F line of the Brillouin zone. In the Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ alloy, the energy of the onset of direct interband transitions exhibits a maximum near $x=0.3$ (i.e. the composition of Bi$_2$Te$_2$Se), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
