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We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength / temperature compared to a linear MZM driven with a distributed driver. More importantly, it enables a ~20X improvement in power consumption compared to a 50 {Omega} matched linear traveling wave modulator with comparable phase shifter technology, drive voltage and output optical modulation amplitude. Passive biasing of the Mach-Zehnder interferometer is further implemented by replacing a splitter element in the MZM with a novel device combining splitting and fiber coupling functionalities in a single, multi-modal structure, that converts permanent fiber placement into a phase correction. Both concepts are combined in a single modulator device, removing the need for any type of active control in a wide temperature operation range.
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable
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Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostat
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A nonlinear phase shift is introduced to a Mach-Zehnder interferometer (MZI), and we present a scheme for enhancing the phase sensitivity. In our scheme, one input port of a standard MZI is injected with a coherent state and the other input port is i