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Graphene is a 2D material with appealing electronic and optoelectronic properties. It is a zero-bandgap material with valence and conduction bands meeting in a single point (Dirac point) in the momentum space. Its conductivity can be changed by shifting the Fermi level energy via an external electric field. This important property determines broadband and tunable absorption at optical frequencies. Moreover, its conductivity is a complex quantity, i.e. Graphene exhibits both electro-absorption and electro-refraction tunability, and this is an intriguing property for photonic applications. For example, it can be combined as an active material for silicon waveguides to realize efficient detectors, switches and modulators. In this paper, we review our results in the field, focusing on graphene-based optical modulators integrated on Silicon photonic platforms. Results obtained in the fabrication of single- and double-layer capacitive modulators are reported showing intensity and phase modulation, resilience of the generated signals to chromatic dispersion because of proper signal chirp and operation up to 50 Gb/s.
Reliable operation of photonic integrated circuits at cryogenic temperatures would enable new capabilities for emerging computing platforms, such as quantum technologies and low-power cryogenic computing. The silicon-on-insulator platform is a highly
We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-gr
Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components usually result
Optical isolators, while commonplace in bulk- and fiber-optic systems, remain a key missing component in integrated photonic systems. Isolation using magneto-optic effects has been difficult to implement due to fabrication restraints, motivating use
This paper presents the design, the fabrication and the characterization of Schottky graphene/silicon photodetectors, operating at both 2 micron and room temperature. The graphene/silicon junction has been carefully: characterized device shows a non