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We demonstrate a selectively emitting optical Fabry-Perot resonator based on a few-nm-thin continuous metallic titanium nitride film, separated by a dielectric spacer from an optically thick titanium nitride back-reflector, which exhibits excellent stability at 1070 K against chemical degradation, thin-film instabilities and melting point depression. The structure paves the way to the design and fabrication of refractory thermal emitters using the well-established processes known from the field of multilayer and rugate optical filters. We demonstrate that a few-nanometer thick films of titanium nitride can be stable under operation at temperatures exceeding 1070 K. This type of selective emitter provides a means towards near-infrared thermal emission that could potentially be tailored to the accuracy level known from rugate optical filters.
We investigate thin film resistive thermometry based on metal-to-insulator-transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance have been calibrated versus temperature and magnetic field
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high
We report on the direct measurement of the electron-phonon relaxation time, {tau}eph, in disordered TiN films. Measured values of {tau}eph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3 temperature dependence
We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 mu s by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the Josephson j
The coherent manipulation of acoustic waves on the nanoscale usually requires multilayers with thicknesses and interface roughness defined down to the atomic monolayer. This results in expensive devices with predetermined functionality. Nanoscale mes