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تسجيل مستخدم جديدCharge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
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This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
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