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We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 {AA} in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation as (111) or (-1-1-1). Further verification of the grain orientation is made by Ar+ sputtering FeGe(-1-1-1) surface allowing direct imaging of the subsurface layer.
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains ch
The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially grown (Bi_{1-x
We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogal
Insulating uniaxial room-temperature ferromagnets are a prerequisite for commonplace spin wave-based devices, the obstacle in contemporary ferromagnets being the coupling of ferromagnetism with large conductivity. We show that the uniaxial $A^{1+2x}$
The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$times$7) by low-energy electron diffract