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تسجيل مستخدم جديدFFLO Superconductivity Mediated by Excitonic Fluctuation in Semimetallic Ta$_2$NiSe$_5$
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We investigate the excitonic fluctuation and its mediated superconductivity in the quasi one-dimensional three-chain Hubbard model for Ta$_2$NiSe$_5$ known as a candidate material for the excitonic insulator. In the semiconducting case and the semimetallic case with a small band-overlapping where one conduction ($c$) band and one valence ($f$) band cross the Fermi level, the excitonic fluctuation with $bm{q}=bm{0}$ is enhanced due to the $c$-$f$ Coulomb interaction and diverges towards the uniform excitonic order corresponding to the excitonic insulator. On the other hands, in the semimetallic case with a large band-overlapping where two $c$ bands and one $f$ band cross the Fermi level, the non-uniform excitonic fluctuation with $bm{q} eq bm{0}$ corresponding to the nesting vector between the $c$ and $f$ Fermi-surfaces (FSs) becomes dominant and results in the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) excitonic order characterized by the condensation of excitons with finite center-of-mass momentum $bm{q}$. Near the instability, the largely enhanced excitonic fluctuations mediate the $c$-$f$ interband Cooper pairs with finite center-of-mass momentum resulting in the FFLO superconductivity, which is expected to be realized in the semimetallic Ta$_2$NiSe$_5$ under high pressure.
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The three-chain Hubbard model for Ta$_2$NiSe$_5$ known as a candidate material for the excitonic insulator is investigated over the wide range of energy gap $D$ between the two-fold degenerate conduction bands and the nondegenerate valence band inclu
ding both semiconducting ($D>0$) and semimetallic ($D<0$) cases. In the semimetallic case, the difference of the band degeneracy inevitably causes the imbalance of each Fermi wavenumber, resulting in a remarkable excitonic state characterized by the condensation of excitons with finite center-of-mass momentum $q$, the so-called Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) excitonic state. With decreasing $D$ corresponding to increasing pressure, the obtained excitonic phase diagram shows a crossover from BEC ($Dsimg 0$) to BCS ($Dsiml 0$) regime, and then shows a distinct phase transition at a certain critical value $D_c(<0)$ from the uniform ($q=0$) to the FFLO ($q e 0$) excitonic state, as expected to be observed in Ta$_2$NiSe$_5$ under high pressure.
The excitonic insulator Ta$_2$NiSe$_5$ experiences a first-order structural transition under pressure from rippled to flat layer-structure at Ps = 3 GPa, which drives the system from an almost zero-gap semiconductor to a semimetal. The pressure-induc
ed semimetal, with lowering temperature, experiences a transition to another semimetal with a partial-gap of 0.1-0.2 eV, accompanied with a monoclinic distortion analogous to that occurs at the excitonic transition below Ps. We argue that the partial-gap originates primarily from a symmetry-allowed hybridization of Ta-conduction and Ni-valence bands due to the lattice distortion, indicative of the importance of electron-lattice coupling. The transition is suppressed with increasing pressure to Pc = 8 GPa. Superconductivity with a maximum Tsc = 1.2 K emerges around Pc, likely mediated by strongly electron-coupled soft phonons. The electron-lattice coupling is as important ingredient as the excitonic instability in Ta2NiSe5.
The microscopic quantum interference associated with excitonic condensation in Ta$_2$NiSe$_5$ is studied in the BCS-type mean-field approximation. We show that in ultrasonic attenuation the coherence peak appears just below the transition temperature
$T_{rm c}$ whereas in NMR spin-lattice relaxation the rate rapidly decreases below $T_{rm c}$; these observations can offer a crucial experimental test for the validity of the excitonic condensation scenario in Ta$_2$NiSe$_5$. We also show that the excitonic condensation manifests itself in a jump of the heat capacity at $T_{rm c}$ as well as in softening of the elastic shear constant, in accordance with the second-order phase transition observed in Ta$_2$NiSe$_5$.
Transition metal chalcogenide Ta$_2$NiSe$_5$, a promising material for the excitonic insulator, is investigated on the basis of the quasi-one-dimensional three-chain Hubbard model with two conduction ($c$) bands and one valence ($f$) band. In the sem
imetallic case where only one of two $c$ bands and the $f$ band cross the Fermi level, the transition from the $c$-$f$ compensated semimetal to the uniform excitonic insulator takes place at low temperature as the same as in the semiconducting case. On the other hand, when another $c$ band also crosses the Fermi level, the system shows three types of Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) excitonic orders characterized by the condensation of excitons with finite center-of-mass momentum $q$ corresponding to the three types of nesting vectors between the imbalanced two $c$ and one $f$ Fermi surfaces. The obtained FFLO states are metallic in contrast to the excitonic insulator and are expected to be observed in semimetallic Ta$_2$NiSe$_5$ under high pressure.
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