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SmB6 is a candidate topological Kondo insulator that displays surface conduction at low temperatures. Here, we perform torque magnetization measurements as a means to detect de Haas-van Alphen (dHvA) oscillations in SmB6 crystals grown by aluminum flux. We find that dHvA oscillations occur in single crystals containing embedded aluminum, originating from the flux used to synthesize SmB6. Measurements on a sample with multiple, unconnected aluminum inclusions show that aluminum crystallizes in a preferred orientation within the SmB6 cubic lattice. The presence of aluminum is confirmed through bulk susceptibility measurements, but does not show a signature in transport measurements.
Recent theoretical and experimental findings suggest that the long-known but not well understood low temperature resistance plateau of SmB6 may originate from protected surface states arising from a topologically non-trivial bulk band structure havin
The mixed valent compound SmB6 is of high current interest as the first candidate example of topologically protected surface states in a strongly correlated insulator and also as a possible host for an exotic bulk many-body state that would manifest
SmB6 is a promising candidate material that promises to elucidate the connection between strong correlations and topological electronic states, which is a major challenge in condensed matter physics. The electron correlations are responsible for the
Topological semimetals are systems in which the conduction and the valence bands cross each other and this crossing is protected by topological constraints. These materials provide an intriguing test of fundamental theory and their exceptional physic
We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations