ترغب بنشر مسار تعليمي؟ اضغط هنا

On the Chemistry and Physical Properties of Flux and Floating Zone Grown SmB6 Single Crystals

74   0   0.0 ( 0 )
 نشر من قبل William Phelan
 تاريخ النشر 2015
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Recent theoretical and experimental findings suggest that the long-known but not well understood low temperature resistance plateau of SmB6 may originate from protected surface states arising from a topologically non-trivial bulk band structure having strong Kondo hybridization. Yet other studies have ascribed this feature to impurity phases, sample vacancies, and surface reconstructions. Given the typical methods used to prepare SmB6 single crystals, the flux and floating zone procedures, these ascriptions should not be taken lightly. Here, we demonstrate how compositional variations and observable amounts of impurity phases in SmB6 crystals grown by floating zone and flux affect the physical properties. From neutron diffraction and X-ray computed tomography experiments, we observe that a 154Sm11B6 crystal prepared using aluminum flux contains co-crystallized, epitaxial aluminum. A large, nearly stoichiometric crystal of SmB6 was successfully grown using the float-zone technique; upon continuing the zone melting, samarium vacancies are introduced. These samarium vacancies drastically alter the resistance and plateauing magnitude of the low temperature resistance compared to stoichiometric SmB6. These results highlight that small presences of impurity phases and compositional variations must be considered when collecting and analyzing physical property data of SmB6. Finally, a more accurate samarium-154 coherent neutron scattering length value, 8.9(1) fm, is reported.



قيم البحث

اقرأ أيضاً

The perovskite SrVO$_3$ is of interest for a variety of applications due to its simple metallic character and stability in reducing environments. Here we report the preparation of single-crystal SrVO$_3$ using the laser floating zone technique. Laue diffraction implies single domains ca. 30 mm in length. The stoichiometry of optimized crystals was found to be Sr$_{0.985}$VO$_{2.91}$ using inductively coupled plasma optical emission spectrometry and neutron powder diffraction analysis, with compositions adjustable depending on the crystal pulling rate. Heat capacity measurements from 2 to 300 K show variations with composition, attributable to a combination of impurity scattering and changes in phonon dynamics.Our results demonstrate the utility of the laser floating zone technique in preparing a range of materials, and our advances with SrVO$_3$ may help lead to applications including catalysis, transparent conducting oxides, thermionic emitters, and other electronic devices.
We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB$_6$.
Single crystal growth of {alpha}-Na$_x$MnO$_2$ (x = 0.90) is reported via the floating zone technique. The conditions required for stable growth and intergrowth-free crystals are described along with the results of trials under alternate growth atmos pheres. Chemical and structural characterizations of the resulting {alpha}-Na$_{0.90}$MnO$_2$ crystals are performed using ICP-AES, NMR, XANES, XPS, and neutron diffraction measurements. As a layered transition metal oxide with large ionic mobility and strong correlation effects, {alpha}-Na$_x$MnO$_2$ is of interest to many communities, and the implications of large volume, high purity, single crystal growth are discussed.
SmB6 is a candidate topological Kondo insulator that displays surface conduction at low temperatures. Here, we perform torque magnetization measurements as a means to detect de Haas-van Alphen (dHvA) oscillations in SmB6 crystals grown by aluminum fl ux. We find that dHvA oscillations occur in single crystals containing embedded aluminum, originating from the flux used to synthesize SmB6. Measurements on a sample with multiple, unconnected aluminum inclusions show that aluminum crystallizes in a preferred orientation within the SmB6 cubic lattice. The presence of aluminum is confirmed through bulk susceptibility measurements, but does not show a signature in transport measurements.
103 - J. Li , C. E. Ekuma , I. Vekhter 2012
We report both experimental and theoretical investigations of the physical properties of Ba$_mathrm{2}$Mn$_mathrm{2}$Sb$_mathrm{2}$O single crystals. This material exhibits a hexagonal structure with lattice constants: a = 4.7029(15) AA{} and c = 19. 9401(27) AA{}, as obtained from powder X-ray diffraction measurements, and in agreement with structural optimization through density functional theory (DFT) calculations. The magnetic susceptibility and specific heat show anomalies at T$_mathrm{N}$ = 60 K, consistent with antiferromagnetic ordering. However, the magnitude of T$_mathrm{N}$ is significantly smaller than the Curie-Weiss temperature ($mid$$mathrm{Theta_{CW}}$$mid$ $approx$ 560 K), suggesting a magnetic system of reduced dimensionality. The temperature dependence of both the in-plane and out-of-plane resistivity changes from an activated at $T$ $>$ T$_mathrm{x}$ $sim$ 200 K to a logarithmic at $T$ $<$ T$_mathrm{x}$. Correspondingly, the magnetic susceptibility displays a bump at T$_mathrm{x}$. DFT calculations at the DFT + U level support the experimental observation of an antiferromagnetic ground state.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا