ﻻ يوجد ملخص باللغة العربية
We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a piezoelectric actuator. In particular, we investigate in detail the contributions of various elements of the expansion of the electrical polarization in terms of externally induced elastic strain on the latter two important quantum dot properties. Based on the comparison of the effects of first- and second-order piezoelectricity we provide a simple relation to estimate the influence of applied anisotropic stress on the quantum dot dipole moment for quantum dots significantly lattice mismatched to the host crystal.
Recently, longitudinal acoustic phonons have been identified as the main source of the intensity damping observed in Rabi rotation measurements of the ground-state exciton of a single InAs/GaAs quantum dot. Here we report experiments of intensity dam
We study optically driven Rabi rotations of a quantum dot exciton transition between 5 and 50 K, and for pulse-areas of up to $14pi$. In a high driving field regime, the decay of the Rabi rotations is nonmonotonic, and the period decreases with pulse
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study on the fin
We investigated optical spin orientation and dynamic nuclear polarization (DNP) in individual self-assembled InGaAs/GaAs quantum dots (QDs) doped by a single Mn atom, a magnetic impurity providing a neutral acceptor A$^0$ with an effective spin $J=1$
We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperatur