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Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $mu$e$/sqrt{text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $mu$e$/sqrt{text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout.
A photonic integrated circuit (PIC) comprised of an 11 cm multimode speckle waveguide, a 1x32 splitter, and a linear grating coupler array is fabricated and utilized to receive 2 GHz of radio-frequency (RF) signal bandwidth from 2.5 to 4.5 GHz using
To realize nanomechanical graphene-based pressure and gas sensors, it is beneficial to have a method to electrically readout the static displacement of a suspended graphene membrane. Capacitive readout, typical in micro-electro-mechanical systems (ME
We utilize a homodyne detection technique to achieve a new sensitivity limit for atom-based, absolute radio-frequency electric field sensing of $mathrm{5 mu V cm^{-1} Hz^{-1/2} }$. A Mach-Zehnder interferometer is used for the homodyne detection. Wit
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device
The high flexibility, impermeability and strength of graphene membranes are key properties that can enable the next generation of nanomechanical sensors. However, for capacitive pressure sensors the sensitivity offered by a single suspended graphene