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تسجيل مستخدم جديدTwo-Dimensional Photonic Crystal Slab Nanocavities on Bulk Single-Crystal Diamond
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Color centers in diamond are promising spin qubits for quantum computing and quantum networking. In photon-mediated entanglement distribution schemes, the efficiency of the optical interface ultimately determines the scalability of such systems. Nano-scale optical cavities coupled to emitters constitute a robust spin-photon interface that can increase spontaneous emission rates and photon extraction efficiencies. In this work, we introduce the fabrication of 2D photonic crystal slab nanocavities with high quality factors and cubic wavelength mode volumes -- directly in bulk diamond. This planar platform offers scalability and considerably expands the toolkit for classical and quantum nanophotonics in diamond.
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The development of solid-state photonic quantum technologies is of great interest for fundamental studies of light-matter interactions and quantum information science. Diamond has turned out to be an attractive material for integrated quantum informa
tion processing due to the extraordinary properties of its colour centres enabling e.g. bright single photon emission and spin quantum bits. To control emitted photons and to interconnect distant quantum bits, micro-cavities directly fabricated in the diamond material are desired. However, the production of photonic devices in high-quality diamond has been a challenge so far. Here we present a method to fabricate one- and two-dimensional photonic crystal micro-cavities in single-crystal diamond, yielding quality factors up to 700. Using a post-processing etching technique, we tune the cavity modes into resonance with the zero phonon line of an ensemble of silicon-vacancy centres and measure an intensity enhancement by a factor of 2.8. The controlled coupling to small mode volume photonic crystal cavities paves the way to larger scale photonic quantum devices based on single-crystal diamond.
We demonstrate two-dimensional photonic crystal cavities operating at telecommunication wavelengths in a single-crystal diamond membrane. We use a high-optical-quality and thin (~ 300 nm) diamond membrane, supported by a polycrystalline diamond frame
, to realize fully suspended two-dimensional photonic crystal cavities with a high theoretical quality factor of ~ $8times10^6$ and a relatively small mode volume of ~2$({lambda}/n)^3$. The cavities are fabricated in the membrane using electron-beam lithography and vertical dry etching. We observe cavity resonances over a wide wavelength range spanning the telecommunication O- and S-bands (1360 nm-1470 nm) with Q factors of up to ~1800. Our method offers a new direction for on-chip diamond nanophotonic applications in the telecommunication-wavelength range.
We have designed photonic crystal suspended membranes with optimized optical and mechanical properties for cavity optomechanics. Such resonators sustain vibration modes in the megahertz range with quality factors of a few thousand. Thanks to a two-di
mensional square lattice of holes, their reflectivity at normal incidence at 1064 nm reaches values as high as 95%. These two features, combined with the very low mass of the membrane, open the way to the use of such periodic structures as deformable end-mirrors in Fabry-Perot cavities for the investigation of cavity optomechanical effects
We show that a scalable photonic crystal nanocavity array, in which single embedded quantum dots are coherently interacting, can perform as an universal single-operation quantum gate. In a passive system, the optical analogue of electromagnetically-i
nduced-transparency is observed. The presence of a single two-level system in the array dramatically controls the spectral lineshapes. When each cavity couples with a two-level system, our scheme achieves two-qubit gate operations with high fidelity and low photon loss, even in the bad cavity limit and with non-ideal detuning and decoherence.
We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon
at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is present only in the region where air-holes have been etched during the fabrication process. Detectable emission from the cavity mode persists up to room-temperature, in strong contrast the background emission vanishes for T > 150 K. An Ahrrenius type analysis of the temperature dependence of the luminescence signal recorded either in-resonance with the cavity mode, or weakly detuned, suggests that the higher temperature stability may arise from an enhanced internal quantum efficiency due to the Purcell-effect.
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