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We investigate the electron and nuclear spin coherence properties of ytterbium ($mathrm{Yb}^{3+}$) ions with non-zero nuclear spin, within an yttrium orthosilicate (Y$_2$SiO$_5$) crystal, with a view to their potential application in quantum memories or repeaters. We find electron spin-lattice relaxation times are maximised at low magnetic field ($<100$ mT) where $g~sim6$, reaching 5 s at 2.5 K, while coherence times are maximised when addressing ESR transitions at higher fields where $gsim0.7$ where a Hahn echo measurement yields $T_2$ up to 73 $mu$s. Dynamical decoupling (XY16) can be used to suppress spectral diffusion and extend the coherence lifetime to over 0.5 ms, close to the limit of instantaneous diffusion. Using Davies electron-nuclear-double-resonance (ENDOR), we performed coherent control of the $^{173}mathrm{Yb}^{3+}$ nuclear spin and studied its relaxation dynamics. At around 4.5 K we measure a nuclear spin $T_1$ and $T_2$ of 4 and 0.35 ms, respectively, about 4 and 14 times longer than the corresponding times for the electron spin.
Praseodymium (Pr$^{3+}$) ions doped in the site 1 of yttrium orthosilicate (Y$_2$SiO$_5$) has been widely employed as the photonic quantum memory due to their excellent optical coherence and spin coherence. While praseodymium ions occupying the site
We present a detailed study of the lifetime of optical spectral holes due to population storage in Zeeman sublevels of Nd$^{3+}$:Y$_2$SiO$_5$. The lifetime is measured as a function of magnetic field strength and orientation, temperature and Nd$^{3+}
Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution. In this work, we investigate ion-beam implanted erbium
We present experimental observations and a study of quantum dynamics of strongly interacting electronic spins, at room temperature in the solid state. In a diamond substrate, a single nitrogen vacancy (NV) center coherently interacts with two adjacen
Quantum simulation of spin models can provide insight into complex problems that are difficult or impossible to study with classical computers. Trapped ions are an established platform for quantum simulation, but only systems with fewer than 20 ions