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A CdTe double-sided strip detector (CdTe-DSD) is an ideal device for imaging and spectroscopic measure- ments in the hard X-ray range above 10 keV. Recent development enables us to realize an imager with a detection area of ~10 cm${^2}$. An energy resolution of 1-2 keV (FWHM) and a position resolution of a few hundred {mu}m are available from the detector. This type of imager has been long awaited for non-destructive elemental analysis, especially by using negative muons, because energies of characteristic X-rays from muonic atoms are about 200 time higher than those from normal atoms. With the method that uses negative muons, hard X-ray information gives the spatial distribution of elements in samples at a certain depth defined by the initial momentum of the muon beam. In order to study three-dimensional imaging capability of the method, we have developed a compact imaging system based on CdTe-DSD and a {phi}3 mm pinhole collimator as the first prototype. We conducted experiments with samples which consist of layers of Al, BN and LiF irradiated by negative muon beams in MUSE/J-PARC and successfully reconstruct hard X-ray images of muonic X-rays from B, N and F at various depths.
We have evaluated the performance of a fine pitch CdTe Double-sided Strip Detector (CdTe-DSD), which was originally developed for the focal plane detector of a hard X-ray telescope to observe the Sun. The detector has a thickness of 750 um and has 12
The temperature of the working environment is a key factor in determining the properties of semiconductor detectors, and it affects the absolute accuracy and stability of the standard detector. In order to determine the temperature coefficient of CdT
High-energy muons generated from cosmic-ray particle showers have been shown to exhibit properties ideal for imaging the interior of large structures. This paper explores the possibility of using a single portable muon detector in conjunction with im
The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consi
The imaging and spectral performance of CdTe double-sided strip detectors (CdTe-DSDs) was evaluated for the ASTRO-H mission. The charcterized CdTe-DSDs have a strip pitch of 0.25 mm, an imaging area of 3.2 cm$times$3.2 cm and a thickness of 0.75 mm.