اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدValence band splitting in bulk dilute bismides
197
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The electronic structure of bulk GaAs$_{1-x}$Bi$_x$ systems for different atomic configurations and Bi concentrations is calculated using density functional theory. The results show a Bi-induced splitting between the light-hole and heavy-hole bands at the $Gamma$-point. We find a good agreement between our calculated splittings and experimental data. The magnitude of the splitting strongly depends on the local arrangement of the Bi atoms but not on the uni-directional lattice constant of the supercell. The additional influence of external strain due to epitaxial growth on GaAs substrates is studied by fixing the in-plane lattice constants.
قيم البحث
اقرأ أيضاً
By using angle-resolved photoemission spectroscopy (ARPES), the variation of the electronic structure of HfSe$_2$ has been studied as a function of sodium intercalation. We observe how this drives a band splitting of the p-orbital valence bands and a
simultaneous reduction of the indirect band gap by values of up to 400 and 280 meV respectively. Our calculations indicate that such behaviour is driven by the band deformation potential, which is a result of our observed anisotropic strain induced by sodium intercalation. The applied uniaxial strain calculations based on density functional theory (DFT) agree strongly with the experimental ARPES data. These findings should assist in studying the physical relationship between doping and strain, as well as for large-scale two-dimensional straintronics.
The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is obse
rved at the As K absorption edge, yielding an As 4p orbital magnetic moment of around -0.1 Bohr magnetons per valence band hole. This is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the Ga K edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn 4p states to the Mn K edge spectra.
This paper presents a numerical implementation of a first-principles envelope-function theory derived recently by the author [B. A. Foreman, Phys. Rev. B 72, 165345 (2005)]. The examples studied deal with the valence subband structure of GaAs/AlAs, G
aAs/Al(0.2)Ga(0.8)As, and In(0.53)Ga(0.47)As/InP (001) superlattices calculated using the local density approximation to density-functional theory and norm-conserving pseudopotentials without spin-orbit coupling. The heterostructure Hamiltonian is approximated using quadratic response theory, with the heterostructure treated as a perturbation of a bulk reference crystal. The valence subband structure is reproduced accurately over a wide energy range by a multiband envelope-function Hamiltonian with linear renormalization of the momentum and mass parameters. Good results are also obtained over a more limited energy range from a single-band model with quadratic renormalization. The effective kinetic-energy operator ordering derived here is more complicated than in many previous studies, consisting in general of a linear combination of all possible operator orderings. In some cases the valence-band Rashba coupling differs significantly from the bulk magnetic Luttinger parameter. The splitting of the quasidegenerate ground state of no-common-atom superlattices has non-negligible contributions from both short-range interface mixing and long-range dipole terms in the quadratic density response.
The II-IV-N$_2$ class of heterovalent ternary nitrides have gained significant interest as alternatives to the III-nitrides for electronic and optoelectronic applications. In this study, we apply first-principles calculations based on density functio
nal theory to systematically investigate the effects of structural distortions due to cation size mismatch on the configurational disorder of the cation sublattice and the valence band structure in this class of materials. We find that larger size mismatch between the group-II and the group-IV cations results in stronger lattice distortions from the ideal hexagonal ratio, which in turn inhibits the propensity of these materials towards octet-rule violating cation disorder. We also demonstrate that the formation energy of a single cation antisite pair, which is fast and simple to calculate, is a strong indicator of a materials propensity towards disorder. Furthermore, the breaking of in-plane symmetry leads to a splitting of the top three valence bands at $Gamma$, which is also directly related to the magnitude of structural distortions. Our work demonstrates that the structural and functional properties of the II-IV-N$_2$ materials can be finely tuned through controllable structural distortions that stem from the choice of cations.
The Dresselhaus and Rashba effects are well-known phenomena in solid-state physics, in which spin-orbit coupling (SOC) splits spin-up and spin-down energy bands of nonmagnetic non-centrosymmetric crystals. Here, we discover a new phenomenon, dubbed a
s band splitting with vanishing spin polarizations (BSVSP), in which, as usual, SOC splits the energy bands in nonmagnetic non-centrosymmetric systems; surprisingly, however, both split bands show no net spin polarization along certain high-symmetry lines in the Brillouin zone. In order to rationalize this phenomenon, we propose a new classification of point groups into pseudo-polar and non-pseudo-polar groups. By means of first-principles simulations, we demonstrate that BSVSP can take place in both symmorphic (e.g., bulk GaAs) and non-symmorphic systems (e.g., two dimensional ferroelectric SnTe). Furthermore, we propose a novel linear magnetoelectric coupling in reciprocal space, which could be employed to tune the spin polarization with an external electric field. The BSVSP effect and its manipulation could therefore pave a new way to novel spintronic devices.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
