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The use of Standard Reference Materials (SRM) from the National Institute of Standards and Technology (NIST) for quantitative analysis of chemical composition using Synchrotron based X-Ray Florescence (SR-XRF) and Scanning Transmission X-Ray Microscopy (STXM) is common. These standards however can suffer from inhomogeneity in chemical composition and thickness and often require further calculations, based on sample mounting and detector geometry, to obtain quantitative results. These inhomogeneities negatively impact the reproducibility of the measurements and the quantitative measure itself. Atomic Layer Deposition (ALD) is an inexpensive, scalable deposition technique known for producing uniform, conformal films of a wide range of compounds on nearly any substrate material. These traits make it an ideal deposition method for producing films to replace the NIST standards and create SRM on a wide range of relevant 2D and 3D substrates. Utilizing Rutherford Backscattering, X-ray Reflectivity, Quartz crystal microbalance, STXM, and SR-XRF we show that ALD is capable of producing films that are homogenous over scales ranging from 100s of microns to nms
A method to treat the surface of Nb is described which potentially can improve the performance of superconducting RF cavities. We present tunneling and x-ray photoemission spectroscopy (XPS) measurements at the surface of cavity-grade niobium samples
In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene. Aluminum oxide films were deposited
International Large Detector (ILD) adopts Particle Flow Algorithm (PFA) for precise measurement of multiple jets. The electromagnetic calorimeter (ECAL) of ILD has two candidates sensor technologies for PFA, which are pixelized silicon sensors and sc
A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required
Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath the tunnel