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A fine control of the variation of the refractive index as a function of structural damage is essential in the fabrication of diamond-based optical and photonic devices. We report here about the variation of the real part of the refractive index at lambda=632.8 nm in high quality single crystal diamond damaged with 2 and 3 MeV protons at low-medium fluences (10^13 - 10^17 ions cm^-2). After implanting the samples in 125x125 um^2 areas with a raster scanning ion microbeam, the variation of optical thickness of the implanted regions was measured with laser interferometric microscopy. The results were analyzed with a model based on the specific damage profile. The technique allows the direct fabrication of optical structures in bulk diamond based on the localized variation of the refractive index, which will be explored in future works.
An accurate control of the optical properties of single crystal diamond during microfabrication processes such as ion implantation plays a crucial role in the engineering of integrated photonic devices. In this work we present a systematic study of t
A combined experimental and numerical study on the variation of the elastic properties of defective single-crystal diamond is presented for the first time, by comparing nano-indentation measurements on MeV-ion-implanted samples with multi-scale model
Tin sulphide thin films of p-type conductivity were grown on glass substrates. The refractive index of the as grown films, calculated using both Transmission and ellipsometry data were found to follow the Sellmeier dispersion model. The improvement i
We demonstrate numerically and experimentally a conjugated gammadion chiral metamaterial that uniaxially exhibits huge optical activity and circular dichroism, and gives a negative refractive index. This chiral design provides smaller unit cell size
We have used ion-irradiation to damage the (001) surfaces of SmB_6 single crystals to varying depths, and have measured the resistivity as a function of temperature for each depth of damage. We observe a reduction in the residual resistivity with inc