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Angular momentum transport in magnetic multilayered structures plays a central role in spintronic physics and devices. The angular momentum currents or spin currents are carried by either quasi-particles such as electrons and magnons, or by macroscopic order parameters such as local magnetization of ferromagnets. Based on the generic interface exchange interaction, we develop a microscopic theory that describes interfacial spin conductance for various interfaces among non-magnetic metals, ferromagnetic and antiferromagnetic insulators. Spin conductance and its temperature dependence are obtained for different spin batteries including spin pumping, temperature gradient and spin Hall effect. As an application of our theory, we calculate the spin current in a trilayer made of a ferromagnetic insulator, an antiferromagnetic insulator and a non-magnetic heavy metal. The calculated results on the temperature dependence of spin conductance quantitatively agree with the existing experiments.
The finite-temperature transport properties of FeRh compounds are investigated by first-principles Density Functional Theory-based calculations. The focus is on the behavior of the longitudinal resistivity with rising temperature, which exhibits an a
The existed theories and methods for calculating interfacial thermal conductance of solid-solid interface lead to diverse values that deviate from experimental measurements. In this letter, We propose a model to estimate the ITC at high temperature w
The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscali
We analyze electron transport through a quantum shuttle for the applied voltage below the instability threshold. We obtain current-voltage characteristics of this system and show that at low temperature they exhibit pronounced steps. The temperature
Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric contr