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Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive studies of the charge dynamics are also reviewed, describing evidence that the MIT in a 2D electron system in silicon should be viewed as the melting of the Coulomb glass. Comparisons are made to recent results on novel 2D materials and quasi-2D strongly correlated systems, such as cuprates.
Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility, effective
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This
Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low temperatures ($T~
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator transition (MI
We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hunds exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean field theo