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Many of the recent advancements in oxide heterostructures have been attributed to modification of spin, charge, lattice, and orbital order parameters at atomically well-defined interfaces. However, the details on the structural, chemical, and electrostatic evolution of interfaces comprised of materials with different crystallographic symmetries remain to be understood. In this work, we have mapped out the interfacial connectivity of atoms of two dissimilar materials, the perovskite SrTiO3 and the brownmillerite SrCoO2.5, using high resolution scanning transmission electron microscopy and geometric phase analysis. We observed unique symmetry-mismatch driven atomic displacements restricted to only the first few atomic layers, which can critically modify the properties of the system. Provided that SrCoO2.5 is a promising energy material due to its open framework structure, the improved understanding of the interfacial structure on the atomic level can lead to the rational design of novel oxide heterostructures.
Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk properties
Thin film synthesis methods developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a limited unde
Using first-principles calculations, we show that the magnetic properties of a two-dimensional antiferromagnetic transition-metal surface are modified on the atomic scale by the adsorption of small organic molecules. We consider benzene (C6H6), cyclo
The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here w
We realize Mn $delta$-doping into Si and Si/Ge interfaces using Mn atomic chains on Si(001). Highly sensitive X-ray absorption fine structure techniques reveal that encapsulation at room temperature prevents the formation of silicides / germanides wh