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تسجيل مستخدم جديدSudden gap-closure across the topological phase transition in Bi$_{2-x}$In$_{x}$Se$_{3}$
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The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band structures throughout the transition. The robust surface state and the bulk gap size ($sim$ 0.50 eV) show no significant change upon doping for $x$ = 0.05, 0.10 and 0.175. At $x$ $geq$ 0.225, the surface state completely disappears and the bulk gap size increases, suggesting a sudden gap-closure and topological phase transition around $x sim$ 0.175$-$0.225. We discuss the underlying mechanism of the phase transition, proposing that it is governed by the combined effect of spin-orbit coupling and interactions upon band hybridization. Our study provides a new venue to investigate the mechanism of the topological phase transition induced by non-magnetic impurities.
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Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupli
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Topological insulators (TIs) are newly discovered states of matter with robust metallic surface states protected by the topological properties of the bulk wavefunctions. A quantum phase transition (QPT) from a TI to a conventional insulator and a cha
nge in topological class can only occur when the bulk band gap closes. In this work, we have utilized time-domain terahertz spectroscopy (TDTS) to investigate the low frequency conductance in (Bi$_{1-x}$In$_x$)$_2$Se$_3$ as we tune through this transition by indium substitution. Above certain substitution levels we observe a collapse in the transport lifetime that indicates the destruction of the topological phase. We associate this effect with the threshold where states from opposite surfaces hybridize. The substitution level of the threshold is thickness dependent and only asymptotically approaches the bulk limit $x approx 0.06$ where a maximum in the mid-infrared absorption is exhibited. This absorption can be identified with the bulk band gap closing and a change in topological class. The correlation length associated with the QPT appears as the evanescent length of the surface states. The observation of the thickness-dependent collapse of the transport lifetime shows the unusual role that finite size effects play in this topological QPT.
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