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The efficiencies/coefficients of performance of three-terminal devices, comprising two electronic terminals and a thermal one (e.g., a boson bath) are discussed. In particular, two procedures are analyzed. (a) One of the electronic terminals is cooled by investing thermal power (from the thermal bath) and electric power (from voltage applied across the electronic junction); (b) The invested thermal power from the boson bath is exploited to cool one electronic terminal and to produce electric power. Rather surprisingly, the coefficient of performance of (b) can be enhanced as compared to that of (a).
When biased at a voltage just below a superconductors energy gap, a tunnel junction between this superconductor and a normal metal cools the latter. While the study of such devices has long been focussed to structures of submicron size and consequent
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK
A quantum dot driven by two ac gate potentials oscillating with a phase lag may be regarded as a quantum engine, where energy is transported and dissipated in the form of heat. In this chapter we introduce a microscopic model for a quantum pump and a
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5
Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known topological insulators with this behavior include the important thermoelectric