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The recent observation of current-induced domain wall (DW) motion with large velocity in ultrathin magnetic wires has opened new opportunities for spintronic devices. However, there is still no consensus on the underlying mechanisms of DW motion. Key to this debate is the DW structure, which can be of Bloch or Neel type, and dramatically affects the efficiency of the different proposed mechanisms. To date, most experiments aiming to address this question have relied on deducing the DW structure and chirality from its motion under additional in-plane applied fields, which is indirect and involves strong assumptions on its dynamics. Here we introduce a general method enabling direct, in situ, determination of the DW structure in ultrathin ferromagnets. It relies on local measurements of the stray field distribution above the DW using a scanning nanomagnetometer based on the Nitrogen-Vacancy defect in diamond. We first apply the method to a Ta/Co40Fe40B20(1 nm)/MgO magnetic wire and find clear signature of pure Bloch DWs. In contrast, we observe left-handed Neel DWs in a Pt/Co(0.6 nm)/AlOx wire, providing direct evidence for the presence of a sizable Dzyaloshinskii-Moriya interaction (DMI) at the Pt/Co interface. This method offers a new path for exploring interfacial DMI in ultrathin ferromagnets and elucidating the physics of DW motion under current.
We present a quantitative and comparative study of magnetic field driven domain wall depinning transition in different ferromagnetic ultrathin films over a wide range of temperature. We reveal a universal scaling function accounting for both drive an
We show that chiral symmetry breaking enables traveling domain wall solution for the conservative Landau-Lifshitz equation of a uniaxial ferromagnet with Dzyaloshinskii-Moriya interaction. In contrast to related domain wall models including stray-fie
We studied the quantum dynamics of ferromagnetic domain walls (topological kink-type solitons) in one dimensional ferromagnetic spin chains. We show that the tunneling probability does not depend on the number of spins in a domain wall; thus, this pr
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls can get ve
We consider Gaussian fluctuations about domain walls embedded in one- or two-dimensional spin lattices. Analytic expressions for the free energy of one domain wall are obtained. From these, the temperature dependence of experimentally relevant spatia