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The dc voltage obtained from the inverse spin Hall effect (iSHE) due to spin pumping in ferromagnet/normal-metal (NM) bilayers can be unintentionally superimposed with magnetoresistive rectification of ac charge currents in the ferromagnetic layer. We introduce a geometry in which these spurious rectification voltages vanish while the iSHE voltage is maximized. In this geometry, a quantitative study of the dc iSHE is performed in a broad frequency range for Permalloy/NM multilayers with NM={Pt, Ta, Cu/Au, Cu/Pt}. The experimentally recorded voltages can be fully ascribed to the iSHE due to spin pumping. Furthermore we measure a small iSHE voltage in single CoFe thin films.
An intriguing feature of spintronics is the use of pure spin-currents to manipulate magnetization, e.g., spin-currents can switch magnetization in spin-torque MRAM, a next-generation DRAM alternative. Giant spin-currents via the spin Hall effect grea
High spin to charge conversion efficiency is the requirement for the spintronics devices which is governed by spin pumping and inverse spin Hall effect (ISHE). In last one decade, ISHE and spin pumping are heavily investigated in ferromagnet/ heavy m
Pure spin current based research is mostly focused on ferromagnet (FM)/heavy metal (HM) system. Because of the high spin orbit coupling (SOC) these HMs exhibit short spin diffusion length and therefore possess challenges for device application. Low S
The polarization of the spin current pumped by a precessing ferromagnet into an adjacent normal metal has a constant component parallel to the precession axis and a rotating one normal to the magnetization. The former component is now routinely detec
A Comment on Phys. Rev. Lett. 111, 217204 (2013), Detection of Microwave Spin Pumping Using the Inverse Spin Hall Effect