اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدPhase-sensitive detection of spin pumping via the ac inverse spin Hall effect
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An intriguing feature of spintronics is the use of pure spin-currents to manipulate magnetization, e.g., spin-currents can switch magnetization in spin-torque MRAM, a next-generation DRAM alternative. Giant spin-currents via the spin Hall effect greatly expand the technological opportunities. Conversely, a ferromagnet/normal metal junction emits spin-currents under microwave excitation, i.e. spin-pumping. While such spin-currents are modulated at the excitation frequency, there is also a non-linear, rectified component that is commonly detected using the corresponding inverse spin Hall effect (iSHE) dc voltage. However, the ac component should be more conducive for quantitative analysis, as it is up to two orders of magnitude larger and linear. But any device that uses the ac iSHE is also sensitive to inductive signals via Faradays Law and discrimination of the ac iSHE signal must rely on phase-sensitive measurements. We use the inductive signal as a reference for a quantitative measurement of the magnitude and phase of the ac iSHE.
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The polarization of the spin current pumped by a precessing ferromagnet into an adjacent normal metal has a constant component parallel to the precession axis and a rotating one normal to the magnetization. The former component is now routinely detec
ted in the form of a DC voltage induced by the inverse spin Hall effect (ISHE). Here we compute AC-ISHE voltages much larger than the DC signals for various material combinations and discuss optimal conditions to observe the effect. Including the backflow of spins is essential for distilling parameters such as the spin Hall angle from ISHE-detected spin pumping experiments.
Pure spin current based research is mostly focused on ferromagnet (FM)/heavy metal (HM) system. Because of the high spin orbit coupling (SOC) these HMs exhibit short spin diffusion length and therefore possess challenges for device application. Low S
OC (elements of light weight) and large spin diffusion length make the organic semiconductors (OSCs) suitable for future spintronic applications. From theoretical model it is explained that, due to $pi$ - $sigma$ hybridization the curvature of the C$_{60}$ molecules may increase the SOC strength. Here, we have investigated spin pumping and inverse spin hall effect (ISHE) in CoFeB/C$_{60}$ bilayer system using coplanar wave guide based ferromagnetic resonance (CPW-FMR) set-up. We have performed angle dependent ISHE measurement to disentangle the spin rectification effects for example anisotropic magnetoresistance, anomalous Hall effect etc. Further, effective spin mixing conductance (g$_{eff}^{uparrowdownarrow}$) and spin Hall angle ($theta_{SH}$) for C$_{60}$ have been reported here. The evaluated value for $theta_{SH}$ is 0.055.
The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization precession
in the ferrimagnetic insulator YIG film a spin-polarized electron current is injected into the Pt layer. This spin current is transformed into electrical charge current by means of the ISHE. An increase of the ISHE-voltage with increasing film thickness is observed and compared to the theoretically expected behavior. The effective damping parameter of the YIG/Pt samples is found to be enhanced with decreasing YIG film thickness. The investigated samples exhibit a spin mixing conductance of g=(7.43 pm 0.36) times 10^{18} m^{-2} and a spin Hall angle of theta_{ISHE} = 0.009 pm 0.0008. Furthermore, the influence of nonlinear effects on the generated voltage and on the Gilbert damping parameter at high excitation powers are revealed. It is shown that for small YIG film thicknesses a broadening of the linewidth due to nonlinear effects at high excitation powers is suppressed because of a lack of nonlinear multi-magnon scattering channels. We have found that the variation of the spin-pumping efficiency for thick YIG samples exhibiting pronounced nonlinear effects is much smaller than the nonlinear enhancement of the damping.
High spin to charge conversion efficiency is the requirement for the spintronics devices which is governed by spin pumping and inverse spin Hall effect (ISHE). In last one decade, ISHE and spin pumping are heavily investigated in ferromagnet/ heavy m
etal (HM) heterostructures. Recently antiferromagnetic (AFM) materials are found to be good replacement of HMs because AFMs exhibit terahertz spin dynamics, high spin-orbit coupling, and absence of stray field. In this context we have performed the ISHE in CoFeB/ IrMn heterostructures. Spin pumping study is carried out for $Co_{40}Fe_{40}B_{20} (12 nm)/ Cu (3 nm)/ Ir_{50}Mn_{50} (t nm)/ AlO_{x} (3 nm)$ samples where textit{t} value varies from 0 to 10 nm. Damping of all the samples are higher than the single layer CoFeB which indicates that spin pumping due to IrMn is the underneath mechanism. Further the spin pumping in the samples are confirmed by angle dependent ISHE measurements. We have also disentangled other spin rectifications effects and found that the spin pumping is dominant in all the samples. From the ISHE analysis the real part of spin mixing conductance (textit{$g_{r}^{uparrow downarrow}$}) is found to be 0.704 $pm$ 0.003 $times$ $10^{18}$ $m^{-2}$.
Conversion of traveling magnons into an electron carried spin current is demonstrated in a time resolved experiment using a spatially separated inductive spin-wave source and an inverse spin Hall effect (ISHE) detector. A short spin-wave packet is ex
cited in a yttrium-iron garnet (YIG) waveguide by a microwave signal and is detected at a distance of 3 mm by an attached Pt layer as a delayed ISHE voltage pulse. The delay in the detection appears due to the finite spin-wave group velocity and proves the magnon spin transport. The experiment suggests utilization of spin waves for the information transfer over macroscopic distances in spintronic devices and circuits.
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