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Role of localized magnetic moments in metal-insulator transitions lies at the heart of modern condensed matter physics, for example, the mechanism of high T$_{c}$ superconductivity, the nature of non-Fermi liquid physics near heavy fermion quantum criticality, the problem of metal-insulator transitions in doped semiconductors, and etc. Dilute magnetic semiconductors have been studied for more than twenty years, achieving spin polarized electric currents in spite of low Curie temperatures. Replacing semiconductors with topological insulators, we propose the problem of dilute magnetic topological semiconductors. Increasing disorder strength which corresponds to the size distribution of ferromagnetic clusters, we suggest a novel disordered metallic state, where Weyl metallic islands appear to form inhomogeneous mixtures with topological insulating phases. Performing the renormalization group analysis combined with experimental results, we propose a phase diagram in $(lambda_{so},Gamma,T)$, where the spin-orbit coupling $lambda_{so}$ controls a topological phase transition from a topological semiconductor to a semiconductor with temperature $T$ and the distribution for ferromagnetic clusters $Gamma$ gives rise to a novel insulator-metal transition from either a topological insulating or band insulating phase to an inhomogeneously distributed Weyl metallic state with such insulating islands. Since electromagnetic properties in Weyl metal are described by axion electrodynamics, the role of random axion electrodynamics in transport phenomena casts an interesting problem beyond the physics of percolation in conventional disorder-driven metal-insulator transitions. We also discuss how to verify such inhomogeneous mixtures based on atomic force microscopy.
We study the ferromagnetism of Ga1-xMnxAs by using a model Hamiltonian, based on an impurity band and the anti-ferromagnetic exchange interaction between the spins of Mn atoms and the charge carriers in the impurity band. Based on the mean field appr
Magnetic properties of Ga$_{1-x}$Mn$_x$N are studied theoretically by employing a tight binding approach to determine exchange integrals $J_{ij}$ characterizing the coupling between Mn spin pairs located at distances $R_{ij}$ up to the 16th cation co
Neutron scattering experiments at the magnetic vacancy percolation threshold concentration, x_v, using the random-field Ising crystal Fe(0.76)Zn(0.24)F2, show stability of the transition to long-range order up to fields H=6.5 T. The observation of th
The author reviews the present understanding of the hole-mediated ferromagnetism in magnetically doped semiconductors and oxides as well as the origin of high temperature ferromagnetism in materials containing no valence band holes. It is argued that
The relationship between the modern and classical Landaus approach to carrier orbital magnetization is studied theoretically within the envelope function approximation, taking ferromagnetic (Ga,Mn)As as an example. It is shown that while the evaluati