اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدReview: Towards Spintronic Quantum Technologies with Dopants in Silicon
41
0
0.0
(
0
)
تأليف
Gavin W. Morley
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Dopants in crystalline silicon such as phosphorus (Si:P) have electronic and nuclear spins with exceptionally long coherence times making them promising platforms for quantum computing and quantum sensing. The demonstration of single-spin single-shot readout brings these ideas closer to implementation. Progress in fabricating atomic-scale Si:P structures with scanning tunnelling microscopes offers a powerful route to scale up this work, taking advantage of techniques developed by the computing industry. The experimental and theoretical sides of this emerging quantum technology are reviewed with a focus on the period from 2009 to mid-2014.
قيم البحث
اقرأ أيضاً
Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and exciting techno
logical revolution. In this article we describe the use of ion-implanted donor spins in silicon for quantum technologies. We review how to fabricate and operate single-atom spin qubits in silicon, obtaining some of the most coherent solid-state qubits, and we discuss pathways to scale up these qubits to build large quantum processors. Heavier group-V donors with large nuclear spins display electric quadrupole couplings that enable nuclear electric resonance, quantum chaos and strain sensing. Donor ensembles can be coupled to microwave cavities to develop hybrid quantum Turing machines. Counted, deterministic implantation of single donors, combined with novel methods for precision placement, will allow the integration of individual donors spins with industry-standard silicon fabrication processes, making implanted donors a prime physical platform for the second quantum revolution.
Emerging quantum technologies require precise control over quantum systems of increasing complexity. Defects in diamond, particularly the negatively charged nitrogen-vacancy (NV) center, are a promising platform with the potential to enable technolog
ies ranging from ultra-sensitive nanoscale quantum sensors, to quantum repeaters for long distance quantum networks, to simulators of complex dynamical processes in many-body quantum systems, to scalable quantum computers. While these advances are due in large part to the distinct material properties of diamond, the uniqueness of this material also presents difficulties, and there is a growing need for novel materials science techniques for characterization, growth, defect control, and fabrication dedicated to realizing quantum applications with diamond. In this review we identify and discuss the major materials science challenges and opportunities associated with diamond quantum technologies.
Rare-earth ions in crystals are a proven solid-state platform for quantum technologies in the ensemble regime and attractive for new opportunities at the single ion level. Among the trivalent rare earths, ${}^{171}mathrm{Yb}^{3+}$ is unique in that i
t possesses a single 4f excited-state manifold and is the only paramagnetic isotope with a nuclear spin of 1/2. In this work, we present measurements of the optical and spin properties of $^{171}$Yb$^{3+}$:YVO$_4$ to assess whether this distinct energy level structure can be harnessed for quantum interfaces. The material was found to possess large optical absorption compared to other rare-earth-doped crystals owing to the combination of narrow inhomogeneous broadening and a large transition oscillator strength. In moderate magnetic fields, we measure optical linewidths less than 3 kHz and nuclear spin linewidths less than 50 Hz. We characterize the excited-state hyperfine and Zeeman interactions in this system, which enables the engineering of a $Lambda$-system and demonstration of all-optical coherent control over the nuclear spin ensemble. Given these properties, $^{171}$Yb$^{3+}$:YVO$_4$ has significant potential for building quantum interfaces such as ensemble-based memories, microwave-to-optical transducers, and optically addressable single rare-earth-ion spin qubits.
An extensively pursued current direction of research in physics aims at the development of practical technologies that exploit the effects of quantum mechanics. As part of this ongoing effort, devices for information processing, secure communication
and high-precision sensing are being implemented with diverse systems, ranging from photons, atoms and spins to mesoscopic superconducting and nanomechanical structures. Their physical properties make some of these systems better suited than others for specific tasks; thus, photons are well suited for transmitting quantum information, weakly interacting spins can serve as long-lived quantum memories, and superconducting elements can rapidly process information encoded in their quantum states. A central goal of the envisaged quantum technologies is to develop devices that can simultaneously perform several of these tasks, namely, reliably store, process, and transmit quantum information. Hybrid quantum systems composed of different physical components with complementary functionalities may provide precisely such multi-tasking capabilities. This article reviews some of the driving theoretical ideas and first experimental realizations of hybrid quantum systems and the opportunities and the challenges they present and offers a glance at the near- and long-term perspectives of this fascinating and rapidly expanding field.
A prerequisite for exploiting spins for quantum data storage and processing is long spin coherence times. Phosphorus dopants in silicon (Si:P) have been favoured as hosts for such spins because of measured electron spin coherence times (T2) longer th
an any other electron spin in the solid state: 14 ms at 7 K. Heavier impurities such as bismuth in silicon (Si:Bi) could be used in conjunction with Si:P for quantum information proposals that require two separately addressable spin species. However, the question of whether the incorporation of the much less soluble Bi into Si leads to defect species that destroy coherence has not been addressed. Here we show that schemes involving Si:Bi are indeed feasible as the electron spin coherence time T2 exceeds 1 ms at 10 K. We polarized the Si:Bi electrons and hyperpolarized the I=9/2 nuclear spin of 209Bi, manipulating both with pulsed magnetic resonance. The larger nuclear spin means that a Si:Bi dopant provides a 20-dimensional Hilbert space rather than the four dimensional Hilbert space of an I=1/2 Si:P dopant.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
