ﻻ يوجد ملخص باللغة العربية
A prerequisite for exploiting spins for quantum data storage and processing is long spin coherence times. Phosphorus dopants in silicon (Si:P) have been favoured as hosts for such spins because of measured electron spin coherence times (T2) longer than any other electron spin in the solid state: 14 ms at 7 K. Heavier impurities such as bismuth in silicon (Si:Bi) could be used in conjunction with Si:P for quantum information proposals that require two separately addressable spin species. However, the question of whether the incorporation of the much less soluble Bi into Si leads to defect species that destroy coherence has not been addressed. Here we show that schemes involving Si:Bi are indeed feasible as the electron spin coherence time T2 exceeds 1 ms at 10 K. We polarized the Si:Bi electrons and hyperpolarized the I=9/2 nuclear spin of 209Bi, manipulating both with pulsed magnetic resonance. The larger nuclear spin means that a Si:Bi dopant provides a 20-dimensional Hilbert space rather than the four dimensional Hilbert space of an I=1/2 Si:P dopant.
Dopants in crystalline silicon such as phosphorus (Si:P) have electronic and nuclear spins with exceptionally long coherence times making them promising platforms for quantum computing and quantum sensing. The demonstration of single-spin single-shot
The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, m
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion
Fe3O4 (magnetite) is one of the most elusive quantum materials and at the same time one of the most studied transition metal oxide materials for thin film applications. The theoretically expected half-metallic behavior generates high expectations tha