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Nd doped phosphate glasses have been studied before and after gamma irradiation in order to understand the effect of glass composition and radiation induced defects on the optical properties of glasses. UV, Vis absorption and photoluminescence spectra of these glasses are found strongly dependent on the composition of glass matrix, particularly on the ratio of oxygen (O) and neodymium (Nd) concentration obtained from energy dispersive X-ray spectroscopic (EDX) measurement. Gamma irradiation of glass modifies the transmission below 700 nm due to generation of some new absorption bands corresponding to different types of defects. Observations indicate toward possibility of change in the valence state of Nd3+ to Nd2+ and generation of oxygen vacancies in glass matrix. EDX and X-ray photoelectron spectroscopic (XPS) measurements indicate change in the composition of glasses particularly decrease in the relative concentration of oxygen in glass samples after gamma irradiation.
Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectra (XPS) of Nd doped phosphate glasses have been studied before and after gamma irradiation in order to find the behavior of chemical bonds, which decide the structural changes in
Here were report a study of picene nano-cristalline thin films doped with pentacene molecules. The thin films were grown by supersonic molecular beam deposition with a doping concentration that ranges between less than one molecules of pentacene ever
Squaraine dyes (SQs) represent a versatile class of functional molecules with strong absorption and emission features, widely used as near-infrared sensitizers in organic and hybrid photovoltaic devices. In this context, the photodynamics of such mol
Conversion of spin to charge current was observed in SrTiO3 doped with Nd (Nd:STO), which exhibited a metallic behavior even with low concentration doping. The obvious variation of DC voltages for Py/Nd:STO, obtained by inverting the spin diffusion d
The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while G peak of