ﻻ يوجد ملخص باللغة العربية
The recently discovered spin Hall magnetoresistance effect electrically probes pure spin current flow across a ferrimagnetic insulator/normal metal bilayer interface. While usually the DC electrical resistance of the bilayer is measured as a function of the magnetization orientation in the magnetic insulator, we here present magnetoimpedance measurements using bias currents with frequencies up to several GHz. We find that the spin Hall magnetoresistance effect persists up to frequencies of at least 4 GHz, enabling a fast readout of the magnetization direction in magnetic insulator/normal metal bilayers. Our data furthermore show that all interaction time constants relevant for the spin Hall magnetoresistance effect are shorter than 40 ps.
This is a brief review of the phenomenology of the spin Hall effect and related phenomena.
We measure the low-frequency thermal fluctuations of pure spin current in a Platinum film deposited on yttrium iron garnet via the inverse spin Hall effect (ISHE)-mediated voltage noise as a function of the angle $alpha$ between the magnetization and
We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal wi
Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all
The intrinsic spin Hall effect plays an important role in spintronics applications, such as spin-orbit torque-based memory. The bulk space group symmetry determines the form of the bulk spin current conductivity tensor. This paper considers materials