اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSpin Hall Effect
269
0
0.0
(
0
)
تأليف
M.I. Dyakonov
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
This is a brief review of the phenomenology of the spin Hall effect and related phenomena.
قيم البحث
اقرأ أيضاً
In an easy-plane antiferromagnet with the Dzyaloshinskii-Moriya interaction (DMI), magnons are subject to an effective spin-momentum locking. An in-plane temperature gradient can generate interfacial accumulation of magnons with a specified polarizat
ion, realizing the magnon thermal Edelstein effect. We theoretically investigate the injection and detection of this thermally-driven spin polarization in an adjacent heavy metal with strong spin Hall effect. We find that the inverse spin Hall voltage depends monotonically on both temperature and the DMI but non-monotonically on the hard-axis anisotropy. Counterintuitively, the magnon thermal Edelstein effect is an even function of a magnetic field applied along the Neel vector.
Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all
-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel.
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of spin throu
gh an insulator or vacuum to reach a ferromagnet without transferring charge. In a normal metal/insulator/ferromagnetic insulator trilayer (such as Pt/oxide/YIG), the quantum tunneling explains the spin-transfer torque and spin pumping that exponentially decay with the thickness of the insulator. In a normal metal/insulator/ferromagnetic metal trilayer (such as Pt/oxide/Co), the spin transfer in general does not decay monotonically with the thickness of the insulator. Combining with the spin Hall magnetoresistance, this tunneling mechanism points to the possibility of a new type of tunneling spectroscopy that can probe the magnon density of states of a ferromagnetic insulator in an all-electrical and noninvasive manner.
We report on the observation of the acoustic spin Hall effect that facilitates lattice motion induced spin current via spin orbit interaction (SOI). Under excitation of surface acoustic wave (SAW), we find a spin current flows orthogonal to the propa
gation direction of a surface acoustic wave (SAW) in non-magnetic metals. The acoustic spin Hall effect manifests itself in a field-dependent acoustic voltage in non-magnetic metal (NM)/ferromagnetic metal (FM) bilayers. The acoustic voltage takes a maximum when the NM layer thickness is close to its spin diffusion length, vanishes for NM layers with weak SOI and increases linearly with the SAW frequency. To account for these results, we find the spin current must scale with the SOI and the time derivative of the lattice displacement. Such form of spin current can be derived from a Berry electric field associated with time varying Berry curvature and/or an unconventional spin-lattice interaction mediated by SOI. These results, which imply the strong coupling of electron spins with rotating lattices via the SOI, show the potential of lattice dynamics to supply spin current in strong spin orbit metals.
We study the coupled dynamics of spin and charge currents in a two-dimensional electron gas in the transport diffusive regime. For systems with inversion symmetry there are established relations between the spin Hall effect, the anomalous Hall effect
and the inverse spin Hall effect. However, in two-dimensional electron gases of semiconductors like GaAs, inversion symmetry is broken so that the standard arguments do not apply. We demonstrate that in the presence of a Rashba type of spin-orbit coupling (broken structural inversion symmetry) the anomalous Hall effect, the spin Hall and inverse spin Hall effect are substantially different effects. Furthermore we discuss the inverse spin Hall effect for a two-dimensional electron gas with Rashba and Dresselhaus spin-orbit coupling; our results agree with a recent experiment.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
