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Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel.
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized cur
This is a brief review of the phenomenology of the spin Hall effect and related phenomena.
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of spin throu
We report on the observation of the acoustic spin Hall effect that facilitates lattice motion induced spin current via spin orbit interaction (SOI). Under excitation of surface acoustic wave (SAW), we find a spin current flows orthogonal to the propa