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Charge Pumping Through a Single Donor Atom

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 نشر من قبل Giuseppe Carlo Tettamanzi Dr
 تاريخ النشر 2014
  مجال البحث فيزياء
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Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.


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