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Controlled charge pumping in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that non-adiabatic blockade of unwanted tunnel events can obliterate the requirement of having at least two phase-shifted periodic signals to realize quantized pumping. The simple configuration without multiple pumping signals might find wide application in metrological experiments and quantum electronics.
We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to
Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and nor
We study non-adiabatic two-parameter charge and spin pumping through a single-level quantum dot with Coulomb interaction. For the limit of weak tunnel coupling and in the regime of pumping frequencies up to the tunneling rates, $Omega lesssim Gamma/h
We demonstrate single-electron pumping in a gate-defined carbon nanotube double quantum dot. By periodic modulation of the potentials of the two quantum dots we move the system around charge triple points and transport exactly one electron or hole pe
Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are