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We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 1.5 x 10^19 eV-1cm-3 and 2 x 10^20 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with thin (2-3 atomic layers) and thick (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advanta
Low frequency noise close to the carrier remains little explored in spin torque nano oscillators. However, it is crucial to investigate as it limits the oscillators frequency stability. This work addresses the low offset frequency flicker noise of a
We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a sli
Low-frequency $1/f^{gamma}$ noise is ubiquitous, even in high-end electronic devices. For qubits such noise results in decrease of their coherence times. Recently, it was found that adsorbed O$_2$ molecules provide the dominant contribution to flux n
The interface between two-dimensional semiconductors and metal contacts is an important topic of research of nanoelectronic devices based on two-dimensional semiconducting materials such as molybdenum disulfide (MoS2). We report transport properties