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We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a slight bias-dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with >. A model is proposed showing qualitative agreements with our experimental data.
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of
Short ballistic graphene Josephson junctions sustain superconducting current with a non-sinusoidal current-phase relation up to a critical current threshold. The current-phase relation, arising from proximitized superconductivity, is gate-voltage tun
Low frequency noise close to the carrier remains little explored in spin torque nano oscillators. However, it is crucial to investigate as it limits the oscillators frequency stability. This work addresses the low offset frequency flicker noise of a
We study the injection current response tensor (also known as circular photogalvanic effect or ballistic current) in ferrolectric monolayer GeS, GeSe, SnS, and SnSe. We find that the injection current is perpendicular to the spontaneous in-plane pola
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with thin (2-3 atomic layers) and thick (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advanta