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Low-frequency $1/f^{gamma}$ noise is ubiquitous, even in high-end electronic devices. For qubits such noise results in decrease of their coherence times. Recently, it was found that adsorbed O$_2$ molecules provide the dominant contribution to flux noise in superconducting quantum interference devices. To clarify the basic principles of such adsorbant noise, we have investigated the formation of low-frequency noise while the mobility of surface adsorbants is varied by temperature. In our experiments, we measured low-frequency current noise in suspended monolayer graphene samples under the influence of adsorbed Ne atoms. Owing to the extremely small intrinsic noise of graphene in suspended Corbino geometry, we could resolve a combination of $1/f^{gamma}$ and Lorentzian noise spectra induced by the presence of Ne. We find that the $1/f^{gamma}$ noise is caused by surface diffusion of Ne atoms and by temporary formation of few-Ne-atom clusters. Our results support the idea that clustering dynamics of defects is relevant for understanding of $1/f$ noise in general metallic systems.
The efficiency of the future devices for quantum information processing is limited mostly by the finite decoherence rates of the qubits. Recently a substantial progress was achieved in enhancing the time, which a solid-state qubit demonstrates a cohe
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of
Low frequency noise close to the carrier remains little explored in spin torque nano oscillators. However, it is crucial to investigate as it limits the oscillators frequency stability. This work addresses the low offset frequency flicker noise of a
We have investigated decoherence in Josephson-junction flux qubits. Based on the measurements of decoherence at various bias conditions, we discriminate contributions of different noise sources. In particular, we present a Gaussian decay function of
1/f noise in current biased La0.82Ca0.18MnO3 crystals has been investigated. The temperature dependence of the noise follows the resistivity changes with temperature suggesting that resistivity fluctuations constitute a fixed fraction of the total re