اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدFerromagnetic two-dimensional crystals: Single layers of K2CuF4
319
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The successful isolation of graphene ten years ago has evoked a rapidly growing scientific interest in the nature of two-dimensional (2D) crystals. A number of different 2D crystals has been produced since then, with properties ranging from superconductivity to insulating behavior. Here, we predict the possibility for realizing ferromagnetic 2D crystals by exfoliating atomically thin films of K2CuF4. From a first-principles theoretical analysis, we find that single layers of K2CuF4 form exactly 2D Kosterlitz-Thouless systems. The 2D crystal can form a free-standing membrane, and exhibits an experimentally accessible transition temperature and robust magnetic moments of 1 Bohr magneton per formula unit. 2D K2CuF4 unites ferromagnetic and insulating properties and is a demonstration of principles for nanoelectronics such as novel 2D-based heterostructures.
قيم البحث
اقرأ أيضاً
Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report
on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.
We propose to engineer time-reversal-invariant topological insulators in two-dimensional (2D) crystals of transition metal dichalcogenides (TMDCs). We note that, at low doping, semiconducting TMDCs under shear strain will develop spin-polarized Landa
u levels residing in different valleys. We argue that gaps between Landau levels in the range of $10-100$ Kelvin are within experimental reach. In addition, we point out that a superlattice arising from a Moire pattern can lead to topologically non-trivial subbands. As a result, the edge transport becomes quantized, which can be probed in multi-terminal devices made using strained 2D crystals and/or heterostructures. The strong $d$ character of valence and conduction bands may also allow for the investigation of the effects of electron correlations on the topological phases.
We investigate, within the framework of linear elasticity theory, edge Rayleigh waves of a two-dimensional elastic solid with broken time-reversal and parity symmetries due to a Berry term. As our prime example, we study the elastic edge wave traveli
ng along the boundary of a two-dimensional skyrmion lattice hosted inside a thin-film chiral magnet. We find that the direction of propagation of the Rayleigh modes is determined not only by the chirality of the thin-film, but also by the Poisson ratio of the crystal. We discover three qualitatively different regions distinguished by the chirality of the low-frequency edge waves, and study their properties. To illustrate the Rayleigh edge waves in real time, we have carried out finite-difference simulations of the model. Apart from skyrmion crystals, our results are also applicable to edge waves of gyroelastic media and screened Wigner crystals in magnetic fields. Our work opens a pathway towards controlled manipulation of elastic signals along boundaries of crystals with broken time-reversal symmetry.
Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced cro
ssover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. It is found that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.
We develop an analytical approach for studying the FMR frequency shift due to dipolar interactions and surface effects in two-dimensional arrays of nanomagnets with (effective) uniaxial anisotropy along the magnetic field. For this we build a general
formalism on the basis of perturbation theory that applies to dilute assemblies but which goes beyond the point-dipole approximation as it takes account of the size and shape of the nano-elements, in addition to their separation and spatial arrangement. The contribution to the frequency shift due to the shape and size of the nano-elements has been obtained in terms of their aspect ratio, their separation and the lattice geometry. We have also varied the size of the array itself and compared the results with a semi-analytical model and reached an agreement that improves as the size of the array increases. We find that the red-shift of the ferromagnetic resonance due to dipolar interactions decreases for smaller arrays. Surface effects may induce either a blue-shift or a red-shift of the FMR frequency, depending on the crystal and magnetic properties of the nano-elements themselves. In particular, some configurations of the nano-elements assemblies may lead to a full compensation between surface effects and dipole interactions.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
