ترغب بنشر مسار تعليمي؟ اضغط هنا

Electronic energy loss processes for slow H and He ions in metals and insulators: new insights

53   0   0.0 ( 0 )
 نشر من قبل Dominik Goebl
 تاريخ النشر 2013
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Electronic stopping of H and He ions in metals and insulators is analyzed at velocities below 0.2 atomic units, i.e. below 1 keV for H and below 4 keV for He. In metals, stopping of H ions is affected by d-electrons only when the d-band extends up to the Fermi energy; for He ions, also d-bands well below the Fermi energy contribute significantly to electronic stopping. In insulators, the low threshold velocity for electronic stopping cannot be explained by electron-hole pair excitation; charge exchange cycles, however, may govern the threshold behavior of electronic stopping in ionic crystals.

قيم البحث

اقرأ أيضاً

This paper deals with a significant family of compounds predicted by simplistic electronic structure theory to be metals but are, in fact, insulators. This false metallic state has been traditionally attributed in the literature to reflect the absenc e of proper treatment of electron-electron correlation (Mott insulators) whereas, in fact, even mean-field like density functional theory describes the insulating phase correctly if the restrictions posed on the simplistic theory are avoided. Such unwarranted restrictions included different forms of disallowing symmetry breaking described in this article. As science and technology of conductors have transitioned from studying simple elemental metals such as Al or Cu to compound conductors such as binary or ternary oxides and pnictides, a special class of degenerate but gapped metals has been noticed. Their presumed electronic configurations show the Fermi level inside the conduction band or valence band, yet there is an internal band gap between the principal band edges. The significance of this electronic configuration is that it might be unstable towards the formation of states inside the internal band gap when the formation of such states costs less energy than the energy gained by transferring carriers from the conduction band to these lower energy acceptor states, changing the original (false) metal to an insulator.
Energy spectra of backscattered and transmitted ions with primary energies of 50 keV and 100 keV interacting with self-supporting foils were recorded with a Time-of-Flight Medium-Energy Ion Scattering setup in a single experiment. Self-supporting Au and W foils without backing material were used. For He ions transmitted through Au the spectrum of detected particles shows two distinct components corresponding to different energy losses in the film, whereas for protons no such phenomenon was observed. To determine the origin of these different contributions, measurements for different angles of incidence and scattering angles have been evaluated. The results suggest that the two components in the spectrum of transmitted He ions could be attributed to impact parameter dependent energy loss, being more prominent for He ions than for protons. The main origin of the necessary impact parameter selection along the different ion trajectories is expected to be texture in the Au-foils.
186 - D. Roth , B. Bruckner , M. V. Moro 2017
The electronic stopping cross sections (SCS) of Ta and Gd for slow protons have been investigated experimentally. The data are compared to the results for Pt and Au to learn how electronic stopping in transition and rare earth metals correlates with features of the electronic band structures. The extraordinarily high SCS observed for protons in Ta and Gd cannot be understood in terms of a free electron gas model, but are related to the high densities of both occupied and unoccupied electronic states in these metals.
There has been growing interest in perovskite BaSnO3 due to its desirable properties for oxide electronic devices including high electron mobility at room temperature and optical transparency. As these electronic and optical properties originate larg ely from the electronic structure of the material, here the basic electronic structure of epitaxially-grown BaSnO3 films is studied using high-energy-resolution electron energy-loss spectroscopy in a transmission electron microscope and ab initio calculations. This study provides a detailed description of the dielectric function of BaSnO3, including the energies of bulk plasmon excitations and critical interband electronic transitions, the band structure and partial densities of states, the measured band gap, and more. To make the study representative of a variety of deposition methods, results from BaSnO3 films grown by both hybrid molecular beam epitaxy and high pressure oxygen sputter deposition are reported.
Pure metals (Cu, Ti, Zr, V, Pd) and diluted Pd-alloys (Pd-Ag, Pd-Pt, Pd-Ru, Pd-Rh) were implanted by 25 keV deuterium ions at fluences in the range (1.2{div}2.3)x1022 D+/m2. The post-treatment depth distributions of deuterium ions were measured 10 da ys and three months after the implantation using Elastic Recoil Detection Analysis (ERDA) and Rutherford Backscattering (RBS). Comparison of the obtained results allowed to make conclusions about relative stability of deuterium and hydrogen gases in pure metals and diluted Pd alloys. Very high diffusion rates of implanted deuterium ions from V and Pd pure metals and Pd alloys were observed. Small-angle X-ray scattering revealed formation of nanosized defects in implanted corundum and titanium.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا