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تسجيل مستخدم جديدMagnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6
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Recently, the resistance saturation at low temperature in Kondo insulator SmB6, a long-standing puzzle in condensed matter physics, was proposed to originate from topological surface state. Here,we systematically studied the magnetoresistance of SmB6 at low temperature up to 55 Tesla. Both temperature- and angular-dependent magnetoresistances show a similar crossover behavior below 5 K. Furthermore, the angular-dependent magnetoresistance on different crystal face confirms a two-dimensional surface state as the origin of magnetoresistances crossover below 5K. Based on two-channels model consisting of both surface and bulk states, the field-dependence of bulk gap with critical magnetic field (Hc) of 196 T is extracted from our temperature-dependent resistance under different magnetic fields. Our results give a consistent picture to understand the low-temperature transport behavior in SmB6, consistent with topological Kondo insulator scenario.
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Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liq
uid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e^2/h and electron-like, exhibits a field-effect mobility of 133 cm^2/V/s and a large carrier density of ~2x10^{14}/cm^2, in good agreement with recent photoemission results. With the ability to gate-modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.
We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $Gamma$ points, due to hybridization between
the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the $Gamma$ point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the $Gamma$ point.
Recent studies suggest that an exemplary Kondo insulator SmB6 belongs to a new class of topological insulators (TIs), in which non-trivial spin-polarized metallic states emerge on surface upon the formation of Kondo hybridization gap in the bulk. Rem
arkably, the bulk resistivity reaches more than 20 Ohm cm at 4 K, making SmB6 a candidate for a so-called bulk-insulating TI. We here investigate optical-pulse responses of SmB6 by pump-and-probe photoemission spectroscopy. Surface photovoltage effect is observed below ~90 K. This indicates that an optically-active band bending region develops beneath the novel metallic surface upon the bulk-gap evolution. The photovoltaic effect persists for >200 microsec, which is long enough to be detected by electronics devices, and could be utilized for optical gating of the novel metallic surface.
We present a detailed investigation of the temperature and depth dependence of the magnetic properties of 3D topological Kondo insulator SmB6 , in particular near its surface. We find that local magnetic field fluctuations detected in the bulk are su
ppressed rapidly with decreasing depths, disappearing almost completely at the surface. We attribute the magnetic excitations to spin excitons in bulk SmB6 , which produce local magnetic fields of about ~1.8 mT fluctuating on a time scale of ~60 ns. We find that the excitonic fluctuations are suppressed when approaching the surface on a length scale of 40-90 nm, accompanied by a small enhancement in static magnetic fields. We associate this length scale to the size of the excitonic state.
The thermal conductivity $kappa$ of the Kondo insulator SmB$_6$ was measured at low temperature, down to 70 mK, in magnetic fields up to 15 T, on single crystals grown using both the floating-zone and the flux methods. The residual linear term $kappa
_0/T$ at $T to 0$ is found to be zero in all samples, for all magnetic fields, in agreement with previous studies. There is therefore no clear evidence of fermionic heat carriers. In contrast to some prior data, we observe a large enhancement of $kappa(T)$ with increasing field. The effect of field is anisotropic, depending on the relative orientation of field and heat current (parallel or perpendicular), and with respect to the cubic crystal structure. We interpret our data in terms of heat transport predominantly by phonons, which are scattered by magnetic impurities.
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