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تسجيل مستخدم جديدLocal transport measurements on epitaxial graphene
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Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport measurements. The systematic variation of probe spacings and substrate temperature has clearly revealed two-dimensional transport regimes of Anderson localization as well as of diffusive transport. The detailed analysis of the temperature dependent data demonstrates that the local on-top nano-sized contacts do not induce significant strain to the epitaxial graphene films.
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Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presen
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