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As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve reversible and fast control of such properties, but it remains a great challenge to create and utilize precisely controlled inhomogeneous deformation in semiconductors. Here, we take a combined experimental and theoretical approach to demonstrate that elastic strain-gradient can be created controllably and reversibly in ZnO micro/nanowires. In particular, we show that the inhomogeneous strain distribution creates an effective field that fundamentally alters the dynamics of the neutral excitons. As the basic principles behind these results are quite generic and applicable to most semiconductors, this work points to a novel route to a wide range of applications in electronics, optoelectronics, and photochemistry.
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly use
This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental develo
Magnetoelectroluminescence (MEL) of organic semiconductor has been experimentally tuned by adopting blended emitting layer consisting of both hole and electron transporting materials. A theoretical model considering intermolecular quantum correlation
In monolayer semiconductor transition metal dichalcogenides, the exciton-phonon interaction is expected to strongly affect the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with
We report on a comprehensive experimental and theoretical study of optical third harmonic generation (THG) on the exciton-polariton resonances in the zinc-blende semiconductors GaAs, CdTe, and ZnSe subject to an external magnetic field, representing