اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدExchange interactions and frustrated magnetism in single-side hydrogenated and fluorinated graphene
133
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Magnetism in single-side hydrogenated (C$_2$H) and fluorinated (C$_2$F) graphene is analyzed in terms of the Heisenberg model with parameters determined from first principles. We predict a frustrated ground state for both systems, which means the instability of collinear spin structures and sheds light on the absence of a conventional magnetic ordering in defective graphene demonstrated in recent experiments. Moreover, our findings suggest a highly correlated magnetic behavior at low temperatures offering the possibility of a spin-liquid state.
قيم البحث
اقرأ أيضاً
We show that charge doping can induce transitions between three distinct adsorbate phases in hydrogenated and fluorinated graphene. By combining ab initio, approximate density functional theory and tight binding calculations we identify a transition
from islands of C$_8$H$_2$ and C$_8$F$_2$ to random adsorbate distributions around a doping level of $pm 0.05$ e/C-atom. Furthermore, in situations with random adsorbate coverage, charge doping is shown to trigger an ordering transition where the sublattice symmetry is spontaneously broken when the doping level exceeds the adsorbate concentration. Rehybridization and lattice distortion energies make graphene which is covalently functionalized from one side only most susceptible to these two kinds of phase transitions. The energy gains associated with the clustering and ordering transitions exceed room temperature thermal energies.
Twisted graphene bilayers provide a versatile platform to engineer metamaterials with novel emergent properties by exploiting the resulting geometric moir{e} superlattice. Such superlattices are known to host bulk valley currents at tiny angles ($alp
haapprox 0.3 ^circ$) and flat bands at magic angles ($alpha approx 1^circ$). We show that tuning the twist angle to $alpha^*approx 0.8^circ$ generates flat bands away from charge neutrality with a triangular superlattice periodicity. When doped with $pm 6$ electrons per moire cell, these bands are half-filled and electronic interactions produce a symmetry-broken ground state (Stoner instability) with spin-polarized regions that order ferromagnetically. Application of an interlayer electric field breaks inversion symmetry and introduces valley-dependent dispersion that quenches the magnetic order. With these results, we propose a solid-state platform that realizes electrically tunable strong correlations.
Magnetism in recently discovered van der Waals materials has opened new avenues in the study of fundamental spin interactions in truly two-dimensions. A paramount question is what effect higher-order interactions beyond bilinear Heisenberg exchange h
ave on the magnetic properties of few-atom thick compounds. Here we demonstrate that biquadratic exchange interactions, which is the simplest and most natural form of non-Heisenberg coupling, assume a key role in the magnetic properties of layered magnets. Using a combination of nonperturbative analytical techniques, non-collinear first-principles methods and classical Monte Carlo calculations that incorporate higher-order exchange, we show that several quantities including magnetic anisotropies, spin-wave gaps and topological spin-excitations are intrinsically renormalized leading to further thermal stability of the layers. We develop a spin Hamiltonian that also contains antisymmetric exchanges (e.g. Dzyaloshinskii-Moriya interactions) to successfully rationalize numerous observations currently under debate, such as the non-Ising character of several compounds despite a strong magnetic anisotropy, peculiarities of the magnon spectrum of 2D magnets, and the discrepancy between measured and calculated Curie temperatures. Our results lay the foundation of a universal higher-order exchange theory for novel 2D magnetic design strategies.
Starting with twisted bilayer graphene, graphene-based moire materials have recently been established as a new platform for studying strong electron correlations. In this paper, we study twisted graphene monolayers on trilayer graphene and demonstrat
e that this system can host flat bands when the twist angle is close to the magic-angle of 1.16$^circ$. When monolayer graphene is twisted on ABA trilayer graphene, the flat bands are not isolated, but are intersected by a Dirac cone with a large Fermi velocity. In contrast, graphene twisted on ABC trilayer graphene (denoted AtABC) exhibits a gap between flat and remote bands. Since ABC trilayer graphene and twisted bilayer graphene are known to host broken-symmetry phases, we further investigate the ostensibly similar magic angle AtABC system. We study the effect of electron-electron interactions in AtABC using both Hartree theory and an atomic Hubbard theory to calculate the magnetic phase diagram as a function of doping, twist angle, and perpendicular electric field. Our analysis reveals a rich variety of magnetic orderings, including ferromagnetism and ferrimagnetism, and demonstrates that a perpendicular electric field makes AtABC more susceptible to magnetic ordering.
The phase diagram of graphene decorated with magnetic adatoms distributed either on a single sublattice, or evenly over the two sublattices, is computed for adatom concentrations as low as $sim1%$. Within the framework of the $s$-$d$ interaction, we
take into account disorder effects due to the random positioning of the adatoms and/or to the thermal fluctuations in the direction of magnetic moments. Despite the presence of disorder, the magnetic phases are shown to be stable down to the lowest concentration accessed here. This result agrees with several experimental observations where adatom decorated graphene has been shown to have a magnetic response. In particular, the present theory provides a qualitative understanding for the results of Hwang et al. [Sci. Rep. 6, 21460 (2016)], where a ferromagnetic phase has been found below $sim30,text{K}$ for graphene decorated with S-atoms.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
