اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSuperfluorescent emission in electrically pumped semiconductor laser
467
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We report superfluorescent (SF) emission in electrically pumped InGaN/InGaN QW lasers with saturable absorber. In particular, we observe a superlinear growth of the peak power of SF pulses with increasing amplitude of injected current pulses and attribute it to cooperative pairing of electron-hole (e-h) radiative recombinations. The phase transitions from amplified spontaneous emission to superfluorescence and then to lasing regime is confirmed by observing (i) abrupt peak power growth accompanied by spectral broadening, (ii) spectral shape with hyperbolic secant envelope and (iii) red shift of central wavelength of SF emission pulse. The observed red shift of SF emission is shown to be caused by the pairing of e-h pairs in an indirect cooperative X-transition.
قيم البحث
اقرأ أيضاً
We design and fabricate an on-chip laser source that produces a directional beam with low spatial coherence. The lasing modes are based on the axial orbit in a stable cavity and have good directionality. To reduce the spatial coherence of emission, t
he number of transverse lasing modes is maximized by fine-tuning the cavity geometry. Decoherence is reached in a few nanoseconds. Such rapid decoherence will facilitate applications in ultrafast speckle-free full-field imaging.
Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer W
Se$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics.
Semiconductor lasers capable of generating a vortex beam with a specific orbital angular momentum (OAM) order are highly attractive for applications ranging from nanoparticle manipulation, imaging and microscopy to fibre and quantum communications. I
n this work, an electrically pumped OAM laser operating at telecom wavelengths is fabricated by monolithically integrating an optical vortex emitter with a distributed feedback (DFB) laser on the same InGaAsP/InP epitaxial wafer. A single-step dry etching process is adopted to complete the OAM emitter, equipped with specially designed top gratings. The vortex beam emitted by the integrated laser is captured, and its OAM mode purity characterized. The electrically pumped OAM laser eliminates the external laser required by silicon- or silicon-on-insulator (SOI)-based OAM emitters, thus demonstrating great potential for applications in communication systems and quantum domain.
We report on an experimental study of photon thermalization and condensation in a semiconductor microresonator in the weak-coupling regime. We measure the dispersion relation of light and the photon mass in a single-wavelength, broad-area resonator.
The observed luminescence spectrum is compatible with a room-temperature, thermal-equilibrium distribution. A phase transition, identified by a saturation of the population at high energies and a superlinear increase of the occupation at low energy, takes place when the phase-space density is of order unity. We explain our observations by Bose-Einstein condensation of photons in equilibrium with a particle reservoir and discuss the relation with laser emission.
We present here a semiconductor injection laser operating in continuous wave with an emission covering more than one octave in frequency, and displaying homogeneous power distribution among the lasing modes. The gain medium is based on a heterogeneou
s quantum cascade structure operating in the THz range. Laser emission in continuous wave takes place from 1.64 THz to 3.35 THz with optical powers in the mW range and more than 80 modes above threshold. Free-running beatnote investigations on narrow waveguides with linewidths of 980 Hz limited by jitter indicate frequency comb operation on a spectral bandwidth as wide as 624 GHz, making such devices ideal candidates for octave-spanning semiconductor-laser-based THz frequency combs.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
