ترغب بنشر مسار تعليمي؟ اضغط هنا

Microwave properties of superconducting atomic-layer deposited TiN films

92   0   0.0 ( 0 )
 نشر من قبل Pieter C. J. J. Coumou
 تاريخ النشر 2012
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We have grown superconducting TiN films by atomic layer deposition with thicknesses ranging from 6 to 89 nm. This deposition method allows us to tune the resistivity and critical temperature by controlling the film thickness. The microwave properties are measured, using a coplanar-waveguide resonator, and we find internal quality factors above a million, high sheet inductances (5.2-620 pH), and pulse response times up to 100 mu s. The high normal state resistivity of the films (> 100 muOmega cm) affects the superconducting state and thereby the electrodynamic response. The microwave response is modeled using a quasiparticle density of states modified with an effective pair-breaker,consistently describing the measured temperature dependence of the quality factor and the resonant frequency.

قيم البحث

اقرأ أيضاً

Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spe ctrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 {AA}/cycle. NbSi was found to grow only on oxide-free films prepared using halogenated precursors. The electronic properties, growth rate, chemical composition, and structure of the films were studied over the deposition temperature range 150-400oC. For all temperatures, the films are found to be stoichiometric NbSi (1:1) with no detectable fluorine impurities, amorphous with a density of 6.65g/cm3, and metallic with a resistivity {rho}=150 {mu}{Omega}.cm at 300K for films thicker than 35 nm. The growth rate was nearly constant for deposition temperatures between 150-275oC, but increases above 300oC suggesting the onset of non-self limiting growth. The electronic properties of the films were measured down to 1.2K and revealed a superconducting transition at Tc=3.1K. To our knowledge, a superconducting niobium silicide film with a 1:1 stoichiometry has never been grown before by any technique.
We report the magnetotransport properties of thin polycrystalline films of the recently discovered non-oxide perovskite superconductor MgCNi3. CNi3 precursor films were deposited onto sapphire substrates and subsequently exposed to Mg vapor at 700 C. We report transition temperatures (Tc) and critical field values (Hc2) of MgCNi3 films ranging in thickness from 7.5 nm to 100 nm. Films thicker than ~40 nm have a Tc ~ 8 K, and an upper critical field Hc2 ~ 14 T, which are both comparable to that of polycrystalline powders. Hall measurements in the normal state give a carrier density, n =-4.2 x 10^22 cm^-3, that is approximately 4 times that reported for bulk samples.
We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high- quality superconducting environment of NbTiN. We describ e the response assuming an effective pair-breaking mechanism modifying the density of states, and compare this to local tunnelling spectra obtained using scanning tunnelling spectroscopy. For the least disordered film (kFl = 8.7, Rs = 13 {Omega}), we find good agreement, whereas for the most disordered film (kFl = 0.82, Rs = 4.3 k{Omega}), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties.
The effect of radiation-induced disordering in a nuclear reactor (fast neutrons fluence Phi = 5cdot10^{19} cm^2, T_{text{irr}} = 340 K) on resistivity rho, superconducting transition temperature T_C and upper critical field H_{C_2} of polycrystalline MgCNi_3 samples was investigated. It was found that T_C decreases under irradiation from 6.5 to 2.9 K and completely recovers after annealing at 600 ^circC. Temperature dependences rho(T) are characteristic of compounds with strong electron-phonon interaction. The dH_{C_2}/dT behaviour testifies to a considerable decrease in density of electronic state at Fermi level N(E_F) in the course of disordering.
110 - Jiansong Gao 2006
We have measured noise in thin-film superconducting coplanar waveguide resonators. This noise appears entirely as phase noise, equivalent to a jitter of the resonance frequency. In contrast, amplitude fluctuations are not observed at the sensitivity of our measurement. The ratio between the noise power in the phase and amplitude directions is large, in excess of 30 dB. These results have important implications for resonant readouts of various devices such as detectors, amplifiers, and qubits. We suggest that the phase noise is due to two-level systems in dielectric materials.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا