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تسجيل مستخدم جديدEnhanced Inverse Spin-Hall Effect in Ultrathin Ferromagnetic/Normal Metal Bilayers
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We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pumping and rectification voltages are observed and distinguished via their angular dependence. The spin-pumping voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and motivates a theory modelling the dependence of impurity scattering on surface roughness.
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Pure spin current based research is mostly focused on ferromagnet (FM)/heavy metal (HM) system. Because of the high spin orbit coupling (SOC) these HMs exhibit short spin diffusion length and therefore possess challenges for device application. Low S
OC (elements of light weight) and large spin diffusion length make the organic semiconductors (OSCs) suitable for future spintronic applications. From theoretical model it is explained that, due to $pi$ - $sigma$ hybridization the curvature of the C$_{60}$ molecules may increase the SOC strength. Here, we have investigated spin pumping and inverse spin hall effect (ISHE) in CoFeB/C$_{60}$ bilayer system using coplanar wave guide based ferromagnetic resonance (CPW-FMR) set-up. We have performed angle dependent ISHE measurement to disentangle the spin rectification effects for example anisotropic magnetoresistance, anomalous Hall effect etc. Further, effective spin mixing conductance (g$_{eff}^{uparrowdownarrow}$) and spin Hall angle ($theta_{SH}$) for C$_{60}$ have been reported here. The evaluated value for $theta_{SH}$ is 0.055.
We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use
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We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction of the ch
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We theoretically examine the spin-transfer torque in the presence of spin-orbit interaction (SOI) at impurities in a ferromagnetic metal on the basis of linear response theory. We obtained, in addition to the usual spin-transfer torque, a new contrib
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We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exch
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