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تسجيل مستخدم جديدOn the interpretation of valence band photoemission spectra at organic-metal interfaces
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Adsorption of organic molecules on well-oriented single crystal coinage metal surfaces fundamentally affects the energy distribution curve of ultra-violet photoelectron spectroscopy spectra. New features not present in the spectrum of the pristine metal can be assigned as interface states having some degree of molecule-substrate hybridization. Here it is shown that interface states having molecular orbital character can easily be identified at low binding energy as isolated features above the featureless substrate sp-plateau. On the other hand much care must be taken in assigning adsorbate-induced features when these lie within the d-band spectral region of the substrate. In fact, features often interpreted as characteristic of the molecule-substrate interaction may actually arise from substrate photoelectrons scattered by the adsorbates. This phenomenon is illustrated through a series of examples of noble-metal single-crystal surfaces covered by monolayers of large pi-conjugated organic molecules.
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The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates from the in
-built potentials which lead to broadened and shifted band spectra in spectroscopy measurements. In this work we present a method to resolve the band alignment of buried semiconductor-metal interfaces using core level photoemission spectroscopy and self-consistent electronic structure simulations. As a proof of principle we apply the method to a clean in-situ grown InAs(100)/Al interface, a system with a strong in-built band bending. Due to the high signal-to-noise ratio of the core level spectra the proposed methodology can be used on previously inaccessible semiconductor-metal interfaces and support targeted design of novel hybrid devices and form the foundation for a interface parameter database for specified synthesis processes of semiconductor-metal systems.
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