اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدFormation and Classification of Amorphous Carbon by Molecular Dynamics Simulation
91
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
By using molecular dynamics simulation, formation mechanisms of amorphous carbon in particular sp${}^3$ rich structure was researched. The problem that reactive empirical bond order potential cannot represent amorphous carbon properly was cleared in the transition process from graphite to diamond by high pressure and the deposition process of amorphous carbon thin films. Moreover, the new potential model which is based on electron distribution simplified as a point charge was developed by using downfolding method. As a result, the molecular dynamics simulation with the new potential could demonstrate the transition from graphite to diamond at the pressure of 15 GPa corresponding to experiment and the deposition of sp${}^3$ rich amorphous carbon.
قيم البحث
اقرأ أيضاً
In this work, the single-component Cu metallic glass was fabricated by the physical vapor deposition on the Zr (0001) crystal substrate at 100 K using the classical molecular dynamic simulation. The same deposition process was performed on the Cu (1
0 0) and Ni (1 0 0) crystal substrate for comparison, only the Cu crystal deposited layer with the fcc structure can be obtained. When depositing the Cu atoms on the Zr substrate at 300 K, the crystal structure was formed, which indicates that except the suitable substrate, low temperature is also a key factor for the amorphous structure formation. The Cu liquid quenching from 2000 K to 100 K were also simulated with the cooling rate 1012 K/s to form the Cu glass film in this work. The Cu metallic glass from the two different processes (physical vapor deposition and rapid thermal quenching from liquid) revealed the same radial distribution function and X-ray diffraction pattern, but the different microstructure from the coordination number and Voronoi tessellation analysis.
To reproduce the diamond structure of silicon, double lattice (DL) potential constructed from two interatomic potentials for face centered cubic (fcc) lattice, is proposed for molecular dynamics (MD) simulations. For the validity test of MD simulatio
n, the Tersoff potential, the Stillinger and Weber (SW) potential, the environment-dependent interatomic (EDI) potential, the charge optimized many-body (COMB) potential, and the modified embedded-atom (MEAM) potential have been also employed for comparison. The crystal lattice of simulated silicon system is identified by calculating the distribution functions of the distances between the atoms and the angles between the lines linking an atom with its nearest neighbors. The results are also compared with the perfect silicon crystal. The crystal lattice, the crystallization temperature, and elastic constants have been calculated from MD simulations using above potentials. The results show that the systems with modified Tersoff, SW, EDI, COMB, and MEAM potentials could not exhibit the diamond structure and only the DL potential gives diamond lattice. The ground state for DL potential is the wurtzite structure, and the metastable state formed during rapid cooling is the cubic diamond structure. The physical parameters obtained from the simulation with DL potential are in agreement with the experiment results. This work indicated that only DL potential is valid for MD simulation of silicon crystal among above various potentials.
We study the kinetics of the H release from plasma-deposited hydrogenated amorphous carbon films under isothermal heating at 450, 500 and 600 {degree}C for long times up to several days using in situ Raman microscopy. Four Raman parameters are analyz
ed. They allow the identification of different processes such as the carbon network reorganization and the H release from sp3 or sp2 carbon atoms and the corresponding timescales. Carbon reorganization with aromatization and loss of sp3 hybridization occurs first in 100 minutes at 500 {degree}C. The final organization is similar at all investigated temperatures. Full H release from sp3 carbon occurs on a longer timescale of about 10 hours while H release from sp2 carbon atoms is only partial, even after several days. All these processes occur more rapidly with higher initial H content, in agreement with what is known about the stability of these types of films. A quantitative analysis of these kinetics studies gives valuable information about the microscopic processes at the origin of the H release through the determination of activation energies.
We revisit here how Raman spectroscopy can be used to estimate the H content in hard hydrogenated amorphous carbon layers. The H content was varied from 2 at.% to 30 at.%, using heat treatments of a a-C:H, from room temperature to 1300 K and was dete
rmined independently using ion beam analysis. We examine the correlation of various Raman parameters and the consistency of their thermal evolution with thermo-desorption results. We identify a weak band at 860 cm-1 attributed to H bonded to C(sp2). We show that the HD/HG parameter (Height ratio between the D and G bands) is quasi-linear in the full range of H content and can thus be used to estimate the H content. Conversely, we show that the m/HG parameter (ratio between the photoluminescence background, m, and the height of the G band), often used to estimate the H content, should be used with care, first because it is sensitive to various photoluminescence quenching processes and second because it is not sensitive to H bonded to C(sp2).
Molecular dynamics simulation is used to study vacancy cluster formation in $beta$- and $alpha$-$Si_3N_4$ with varying vacancy contents (0 - 25.6 at%). Vacancies are randomly created in supercells, which were subsequently heat-treated for 114 nanosec
onds. The results show that both $beta$ and $alpha$ can tolerate vacancies up to 12.8 at% and form clusters, confirming previous experimental data indicating 8 at% vacancy in $alpha$-$Si_3N_4$. However, 25.6 at% vacancy in $beta$ results in complete amorphization, while the same amount in $alpha$ results in a transformation of a semi-amorphous $alpha$ phase to a defective $beta$ phase, leading to the removal of the clusters in newly formed $beta$. This clearly explains why cluster vacancies are not experimentally observed in $beta$, considering that $beta$-$Si_3N_4$ ceramics are produced from $alpha$. Furthermore, the lattice parameters of both modifications increase with increasing vacancy content, revealing the cause of different lattice constants that were previously reported for $alpha$-$Si_3N_4$.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
