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تسجيل مستخدم جديدEffect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation
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We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.
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