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The criticality of vacancy-induced metal-insulator transition (MIT) in graphene is investigated by Kubo-Greenwood formula with tight-binding recursion method. The critical vacancy concentration for the MIT is determined to be 0.053%. The scaling laws for transport properties near the critical point are examined showing several unconventional 2D localization behaviors. Our theoretical results have shed some new lights to the understanding of recent experiments in H-dosed graphene and of 2D disordered systems in general.
The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy
We investigate the interactions between two identical magnetic impurities substituted into a graphene superlattice. Using a first-principles approach, we calculate the electronic and magnetic properties for transition-metal substituted graphene syste
A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and l
We investigate the bias-induced insulator-metal transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Greens function formalism. The insulator-metal transition is explained with th
Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems